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We study the (Anderson) metal-insulator transition (MIT) in tight binding models (TBM) of disordered systems using the scaling behavior of the typical density of states (GDOS) as localization criterion. The GDOS is obtained as the geometrical mean value of the local density of states (LDOS) averaged over many different lattice sites and disorder realizations. The LDOS can efficiently be obtained within the kernel polynomial method (KPM). To check the validity and accuracy of the method, we apply it here to the standard Anderson model of disordered systems, for which the results (for instance for the critical disorder strength of the Anderson transition) are well known from other methods.
We study the (Anderson) metal-insulator transition (MIT) in tight binding models (TBM) of disordered systems using the scaling behavior of the typical density of states (GDOS) as localization criterion. The GDOS is obtained as the geometrical mean value of the local density of states (LDOS) averaged over many different lattice sites and disorder realizations. The LDOS can efficiently be obtained within the kernel polynomial method (KPM). To check the validity and accuracy of the method, we apply it here to the standard Anderson model of disordered systems, for which the results (for instance for the critical disorder strength of the Anderson transition) are well known from other methods.