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This paper, presents a new full-swing low power high performance full adder circuit in CMOS technology. It benefits from a full swing XOR-XNOR module with no feedback transistors, which decreases delay and power consumption. In addition, high driving capability of COUT module and low PDP design of SUM module contribute to more PDP reduction in cascaded mode. In order to have accurate analysis, the new circuit along with several well-known full adders from literature have been modeled and compared with CADENCE. Comparison consists of power consumption, performance, PDP, and area. Results show that there are improvements in both power consumption and performance. This design trades area with low PDP.

Full adders are a core component and play an essential role in the design of contemporary very-large-scale integration (VLSI) integrated circuits. Low-power, high-speed adder design has been the subject of numerous different sorts of research. The never-ending process is still in progress. The saturation point for MOS-based VLSI circuit design has been reached. As a consequence, many additional issues arise when MOS devices are scaled down to the nanoscale range, including an increase in leakage power and a vulnerability to PVT variation. Hence, MOSFET alternatives have been looked after by VLSI industries. Future nanoscale VLSI circuits would benefit greatly from the use of FINFETs in place of MOS transistors. In this paper, two diode-connected transistors-based low power, high speed, and low-power–delay product (PDP) adiabatic logic full adders are proposed using 7 nm technology. DCT TSAA-I, DCT TSAA-II, DCT TCAA-I, and DCT TCAA-II are the names of the proposed structures. Power, speed, and power–delay product (PDP) performance of the proposed adders are compared with those of traditional full adders. According to the simulation outcomes, the proposed adder architectures offer the least PDP in comparison to the adders taken into consideration. On power and delay, the impact of changing variables like temperature, supply voltage, load capacitance, and frequency is seen. A 7 nm FINFET model has been used in the simulations, which were conducted using the Hspice simulation tool.

When an adder circuit, which uses less power and operates at a higher speed, is introduced as a fundamental building block, the multiplier, arithmetic and logic unit (ALU), and digital system’s power delay product (PDP) performance can be easily improved. The graphene nanoribbon field effect transistor (GNRFET) used in very large-scale integrated (VLSI) circuits was developed in the submicron regime and offers superior electrical properties to the MOS transistor. This research paper introduces a full-adder circuit containing twelve GNRFETs (12T GF-FA). Calculations have been made about the introduced 12T GF-FA’s power usage, speed, PDP and leakage power. A few of the existing full adders with 8–32 transistors are compared to the performance of the newly proposed 12T GF-FA in terms of power and delay. For this comparison, some conventional full adders with 8–32 transistors have been implemented using 16nm technology GNRFETs. The pull-down network of the suggested adder has two stacked GNRFETs. The proposed adder’s current conduction and power consumption are reduced by the use of stacked transistors. According to the simulation results, the PDP of the suggested 12T GF-FA is 73.2–99% lower when compared to other full adders considered state-of-the-art. Additionally, it has been researched and documented how variations in the PVT and GNRFET parameters affect the performance of full-adder circuits. The proposed adder, with its low PDP, is especially suitable for VLSI signal processing applications. The simulation was carried out using the HSPICE simulation tool and the 16nm MOS-GNRFET model.