Narrow Results

Gallium Oxide has attracted a great deal of attention for power electronics due to its large bandgap (~ 4.8 eV) as well as availability of cost effective, large area, high quality substrates. In this article, we will discuss advancements in homoepitaxial and heteroepitaxial growth of β-(Al,Ga)₂O₃ and their heterostructures via different growth techniques with the emphasis on metal organic chemical vapor deposition, molecular beam epitaxy, and halide vapor phase epitaxy. We will also review various device structures demonstrated for high power applications.

GaInSb and AlGaInSb compositionally graded buffer layers grown on GaSb by MBE were used to develop unrelaxed InAs_1-xSb_x epitaxial alloys with strain-free native lattice constants up to 2.1% larger than that of GaSb. The in-plane lattice constant of the strained top buffer layer was grown to be equal to the native, unstrained lattice constant of InAs_1-xSb_x with given x. The InAs_0.56Sb_0.44 layers demonstrated a photoluminescence (PL) peak at 9.4 μm at T = 150 K. The minority carrier lifetime measured at 77 K for InAs_0.8Sb_0.2 was 250 ns.