Narrow Results

The adsorption of atomic hydrogen on Cu(111) has been studied using the techniques of helium atom scattering (HAS) and medium-energy ion scattering (MEIS). Ion scattering investigations of the saturated (3 × 3)-H/Cu(111) system indicate that no reconstruction of the Cu substrate exists along the high symmetry directions of the surface. The HAS hydrogen cross-section for H/Cu(111) has been determined to be (12.5 ± 2.5 Ų). The symmetry of the HAS diffraction pattern shows that the (3 × 3)-H/Cu(111) system is formed of a single domain structure.

Analysis using MeV ion beams is a thin film characterisation technique invented some 50 years ago which has recently had the benefit of a number of important advances. This review will cover damage profiling in crystals including studies of defects in semiconductors, surface studies, and depth profiling with sputtering. But it will concentrate on thin film depth profiling using Rutherford backscattering, particle induced X-ray emission and related techniques in the deliberately synergistic way that has only recently become possible. In this review of these new developments, we will show how this integrated approach, which we might call "total IBA", has given the technique great analytical power.

Analysis using MeV ion beams is a thin film characterisation technique invented some 50 years ago which has recently had the benefit of a number of important advances. This review will cover damage profiling in crystals including studies of defects in semiconductors, surface studies, and depth profiling with sputtering. But it will concentrate on thin film depth profiling using Rutherford backscattering, particle induced X-ray emission and related techniques in the deliberately synergistic way that has only recently become possible. In this review of these new developments, we will show how this integrated approach, which we might call “total IBA”, has given the technique great analytical power.