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Continuous improvement of high bit rate fiber optic networking up to 40 Gb/s, results in increased demand for III/V ICs offering ever lower current input noise, higher output voltage swing, lower jitter and lower DC power consumption. Using production E/D and power sub 0,2 μm GaAs PHEMT processes, transimpedance amplifiers have been developed enabling optical input sensitivity as good as −25 dBm at 2.5 Gb/s and −20 dBm at 40 Gb/s. Similarly laser and modulator drivers have been fabricated with jitter as low as 1,8 ps rms at 10 Gb/s and over 7 V output swing up to 40 GHz. Future generations of products will be implemented using sub 0,1 μm processes based on E/D and power GaAs MHEMTs as well as InP HEMTs maintaining a long term performance edge over the Silicon counterparts.

BAE Systems has developed a high power, high yield 70nm 6" 2-mil PHEMT MMIC process for frequencies up to 100GHz. Utilizing T-gate technology and 2-mil substrates, we have created a millimeter wave technology that produces excellent performance from Ka-band through W-bands. The device DC and RF characteristics have excellent uniformity across the wafer. In this paper, we report the 70nm device fabrication on 6-inch wafers and compare the DC and RF characteristics with its mature 0.1μm counterpart.