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Continuous improvement of high bit rate fiber optic networking up to 40 Gb/s, results in increased demand for III/V ICs offering ever lower current input noise, higher output voltage swing, lower jitter and lower DC power consumption. Using production E/D and power sub 0,2 μm GaAs PHEMT processes, transimpedance amplifiers have been developed enabling optical input sensitivity as good as -25 dBm at 2.5 Gb/s and -20 dBm at 40 Gb/s. Similarly laser and modulator drivers have been fabricated with jitter as low as 1,8 ps rms at 10 Gb/s and over 7 V output swing up to 40 GHz. Future generations of products will be implemented using sub 0,1 μm processes based on E/D and power GaAs MHEMTs as well as InP HEMTs maintaining a long tern performance edge over the Silicon counterparts.

BAE Systems has developed a high power, high yield 70nm 6" 2-mil PHEMT MMIC process for frequencies up to 100GHz. Utilizing T-gate technology and 2-mil substrates, we have created a millimeter wave technology that produces excellent performance from Ka-band through W-bands. The device DC and RF characteristics have excellent uniformity across the wafer. In this paper, we report the 70nm device fabrication on 6-inch wafers and compare the DC and RF characteristics with its mature 0.1µm counterpart.

The noise behavior of pseudomorphic double-heterojunction high electron mobility transistors dedicated to power applications is investigated in this paper and compared to conventional low noise field effect transistors. The noise is analyzed from an extrinsic and an intrinsic point of view. It appears that the minimum noise figure is similar for the two devices even if the intrinsic noise sources are different. We explain this phenomenon using the double-heterojunction mode of operation.

Continuous improvement of high bit rate fiber optic networking up to 40 Gb/s, results in increased demand for III/V ICs offering ever lower current input noise, higher output voltage swing, lower jitter and lower DC power consumption. Using production E/D and power sub 0,2 μm GaAs PHEMT processes, transimpedance amplifiers have been developed enabling optical input sensitivity as good as −25 dBm at 2.5 Gb/s and −20 dBm at 40 Gb/s. Similarly laser and modulator drivers have been fabricated with jitter as low as 1,8 ps rms at 10 Gb/s and over 7 V output swing up to 40 GHz. Future generations of products will be implemented using sub 0,1 μm processes based on E/D and power GaAs MHEMTs as well as InP HEMTs maintaining a long term performance edge over the Silicon counterparts.

BAE Systems has developed a high power, high yield 70nm 6" 2-mil PHEMT MMIC process for frequencies up to 100GHz. Utilizing T-gate technology and 2-mil substrates, we have created a millimeter wave technology that produces excellent performance from Ka-band through W-bands. The device DC and RF characteristics have excellent uniformity across the wafer. In this paper, we report the 70nm device fabrication on 6-inch wafers and compare the DC and RF characteristics with its mature 0.1μm counterpart.