BAE Systems has developed a high power, high yield 70nm 6" 2-mil PHEMT MMIC process for frequencies up to 100GHz. Utilizing T-gate technology and 2-mil substrates, we have created a millimeter wave technology that produces excellent performance from Ka-band through W-bands. The device DC and RF characteristics have excellent uniformity across the wafer. In this paper, we report the 70nm device fabrication on 6-inch wafers and compare the DC and RF characteristics with its mature 0.1µm counterpart.

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References

M. Chertouk and et. al. , Manufacturable 0.15μm PHEMT Process for High Volume and Low Cost on 6" GaAs Substrates , Proc. GaAs ManTech Conf. ( 2002 ) . Google Scholar
L. Gunter and et.al , The First 0.1∝m 6" GaAs PHEMT MMIC Process , Proc. GaAs ManTech Conf. ( 2006 ) . Google Scholar
D. Xu., et.al, "A reproducible, high yield method for fabricating ultra-short T-gates on HFETs," patent pending . Google Scholar

Vol. 19, No. 01

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THE FIRST 70NM 6-INCH GaAs PHEMT MMIC PROCESS

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