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BAE Systems has developed a high power, high yield 70nm 6" 2-mil PHEMT MMIC process for frequencies up to 100GHz. Utilizing T-gate technology and 2-mil substrates, we have created a millimeter wave technology that produces excellent performance from Ka-band through W-bands. The device DC and RF characteristics have excellent uniformity across the wafer. In this paper, we report the 70nm device fabrication on 6-inch wafers and compare the DC and RF characteristics with its mature 0.1µm counterpart.

The paper proposes a CMOS 65 nm 24 GHz wide-band frequency synthesizer with programmability on acquisition speed and supply voltage for low power application in 60 GHz millimeter-wave (mmW) wireless transceiver. The role of mmW phase-locked loop (PLL) is significant for supporting 7 GHz bandwidth across the four channels in IEEE 802.15.3c. The PLL is introduced with consideration of system specifications, as well as the design of individual block. In order to maintain the dynamic behavior of a PLL, two control parameters of its loop transfer function are used for programmability, including the charge pump current and pole-zero position. A regulator is also adopted for supply noise suppression. The Voltage-Controlled Oscillator (VCO) covers frequency range from 24.2 to 29.3 GHz, with 19.1% tuning range. On top of the oscillator, a 1.2 V LDO (Low-Dropout Regulator) with 0.2 V dropout voltage is introduced to increase the immunity against low frequency noise fluctuation from supply. With the proposed structure, the PLL provides a loop bandwidth from 0.94 to 2.05 MHz. The phase margin is larger than 54° and the locking time can be adjusted 16% faster than nominal case. The VCO has better power supply rejection ratio (PSRR) of -48 dB, and Phase Noise of -94 dBc/Hz at 1 MHz frequency offset of 24 GHz.

This paper proposes a novel double-ground-slot (DGS) structure for designing the micro-strip lines 90${}^{\circ }$ phase shifter operating in D-band. The DGS phase shifter is implemented in a 0.13-$\mu$m SiGe BiCMOS and has a small core area of 180$\mu$m $\times$ 130$\mu$m including all testing pads. It exhibits measured insertion loss of 1.9dB, return loss of 26dB, and phase error of 4.2${}^{\circ }$ at 155GHz. The proposed DGS 90${}^{\circ }$ phase shifter demonstrates superior performances and therefore has potential to be used in highly-integrated D-band wireless applications.

In this paper, a novel dual-band monopole planar antenna is presented. The antenna is operated in 28/38GHz and has a bandwidth of 0.5/0.7GHz to operate in 5G frequency bands. Additionally, it exhibits a stable omni-directional radiation pattern with high gain characteristics, which helps to improve the performance of future 5G communication devices. The radiation efficiency achieved more than 94% throughout its operating bands. The numerical analysis has been carried out using a three-dimensional (3D) full-wave electromagnetic solver (ANSYS HFSS). In order to validate the numerical analysis, the proposed antenna has been fabricated and shows a good agreement with simulated results. The antenna has been designed and fabricated on Roger RT/Duroid 5880 dielectric substrate. This paper paves a new idea to design dual-band, simple and miniaturized single-element monopole planar antennas, which would be a good candidate for future millimeter-wave 5G communication systems.

BAE Systems has developed a high power, high yield 70nm 6" 2-mil PHEMT MMIC process for frequencies up to 100GHz. Utilizing T-gate technology and 2-mil substrates, we have created a millimeter wave technology that produces excellent performance from Ka-band through W-bands. The device DC and RF characteristics have excellent uniformity across the wafer. In this paper, we report the 70nm device fabrication on 6-inch wafers and compare the DC and RF characteristics with its mature 0.1μm counterpart.