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articleNo Access
HIGH-FREQUENCY NOISE IN PSEUDOMORPHIC DOUBLE-HETEROJUNCTION HIGH ELECTRON MOBILITY TRANSISTORS
- S. LONG,
- L. ESCOTTE,
- J. GRAFFEUIL,
- P. FELLON,
- D. GEIGER, and
- D. PONS
Fluctuation and Noise Letters01 Mar 2002
Preview Abstract
The noise behavior of pseudomorphic double-heterojunction high electron mobility transistors dedicated to power applications is investigated in this paper and compared to conventional low noise field effect transistors. The noise is analyzed from an extrinsic and an intrinsic point of view. It appears that the minimum noise figure is similar for the two devices even if the intrinsic noise sources are different. We explain this phenomenon using the double-heterojunction mode of operation.

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