In this study, the dynamical contact simulation by the finite element method (FEM) for the chemical mechanical polishing (CMP) process is presented. In order to simulate CMP, a numerical model for surface roughness layer of the polishing pad and a numerical procedure for FE contact analysis are newly presented. In the analysis model, the surface roughness layer of the polishing pad is assumed as a flat soft layer. The elastic modulus of the soft layer is treated as a fitting parameter between the experimental results and the numerical model, while the patterned wafer can be assumed as a rigid body. The distribution of contact pressure between the patterned wafer and the polishing pad is computed by FEM. The pattern topography is modified according to the pressure dependency of the polishing rate. The iterations of this numerical procedure and the topography modification give the progress of the polishing process dynamically. In order to solve the contact problems, the finite element discretization needs the minimization of total potential energy with gap-contact constraint conditions. For the practical dynamical simulation, the modified stiffness matrix with the penalty numbers is introduced, Although this numerical procedure is based on the linear contact theory, the solution process with iterative schemes is required for getting a stable contact status. Finally, several 2-D numerical analyses for CMP process are demonstrated. Compared with the experiment, the results by the proposed numerical simulation agree with the experimental results very well and the validity of the proposed numerical model for CMP process is clarified.