An ultra-broad working temperature dielectric material, Bi4TixO12(x = 2.96, 2.98, 3.0, 3.02 and 3.04), prepared by a conventional mixed oxide route was investigated which is supposed to replace lead-containing ceramics for its outstanding dielectric properties. Microstructure and dielectric properties of well-sintered samples (at 1040∘C, 1060∘C, 1080∘C, 1100∘C and 1120∘C) were studied. X-ray diffraction analysis indicated that the new material was in a single Bi-layered perovskite phase. The dielectric constant and dielectric loss at different frequencies (10, 100 and 1000 kHz) were measured at 1100∘C. With the increasing frequency, the dielectric constant decreased and the dielectric loss was almost unchanged. While at 100 kHz, there is the highest relative permittivity (𝜀r) of 2822.8 and the lowest dielectric loss of 0.0040 (x = 2.98), the Curie temperature (Tc) is 668.9∘C. At the frequency of 1 MHz, the highest relative permittivity (𝜀r) is 1115.8 when Ti content is 3.02, and the Curie temperature is 672.2∘C. SEM can explain the results of the dielectric spectrum at different Ti content and sintering temperatures. Z∗ plots show that Bi4Ti3O12 ceramics are a kind of dielectrics. Since it possesses large dielectric constant, low dielectric loss and stable temperature character, this material shows promising applications for the ultra-broad temperature range components, such as high-temperature multilayer ceramic capacitors and microwave ceramics.