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This research aims to study the different phenomena of generalized Rayleigh waves (RWs) in composite structures with piezoelectric material and corrugated surfaces. A thin piezoelectric layer that is precisely attached to an elastic substrate with initial stresses makes up the structure under consideration. By resolving the related electromechanical field equations, expressions for the displacement potential function are produced for both the elastic substrate and the piezoelectric layer. The frequency equations of the studied wave have been discovered as determinants for electrically open and short conditions. There have been both numerical illustrations and graphical demonstrations. On the stage speed of the combined RW, the impact of the grooved border, initial pressure, piezoelectric constant, dielectric constant, and thickness of the piezoelectric layer have been studied. Additionally, the analytical solution to the issue is compared to and shown to be in good agreement with the stiffness matrix approach result. This study offers a theoretical foundation for creating and developing piezoelectric composite-based devices. It has been found that the generalized RW velocity declines with the increase of the values of $\widetilde{e_{15}}$ and ${\epsilon }_{11}$ and an inverse relationship has been found with the increase of the value of $H$. In addition, it has also been noticed that the velocity profile of the generalized RW is greatly influenced by the size of the corrugation (measured at the upper layer).

Lead zirconate titanate (PZT) thin films of 5 μm thick were produced by a hydrothermal method on pure titanium substrates. ZrOCl₂-8H₂O, Pb(NO₃)₂ and TiO₂ were used as precursors and KOH as a promoter. The hydrothermal synthesis of PZT includes nucleation and crystal growth processes at 120°C or 140°C. The crystallization states were investigated by using scanning electron microscopy and X-Ray diffraction. Piezoelectric properties were evaluated from unimorph cantilever type actuators made of the films. The relationships between the deflection of the actuator due to piezoelectric transverse effect and applied electric field in the direction of thickness of the films showed good linearity. The output voltage from the films under cyclic compressive loading increased with increasing loading frequency, and is saturated at 10 Hz. The PZT films produced by the present methods are satisfactory as a smart material, and are better than the films produced using TiCl₄ as Ti precursor.

Ferroelectric, hysteresis, impedance spectroscopy parameters, AC conductivity, and piezoelectric properties in the ceramics of Pb_0.74K_0.52Nb₂O₆ and Pb_0.74K_0.13Sm_0.13Nb₂O₆ have been studied. X-ray diffraction study reveals single phase with the orthorhombic structure. The samples were characterized for ferroelectric and impedance spectroscopy properties from room temperature to 600°C. Cole–Cole plots (Z″ versus Z′) are drawn at different temperatures. The results obtained are analyzed to understand the conductivity mechanism in both the samples. The piezoelectric constant d₃₃ has been found to be 96 × 10^-12 C/N in PKN.

The nonlinear optical parameters (absorption coefficient and refractive index) of semiconductor-plasmas subjected to a transverse magnetic field have been investigated analytically. By employing the coupled-mode scheme, an expression of third-order optical susceptibility and resultant nonlinear absorption and refractive index of the medium are obtained. The analysis has been applied to both cases, viz., centrosymmetric (β = 0) and noncentrosymmetric (β ≠ 0) in the presence of magnetic field. The numerical estimates are made for InSb crystal at liquid nitrogen temperature duly irradiated by a 10-nanosecond pulsed 10.6 μm CO₂ laser. The influence of doping concentration and magnetic field on both the nonlinear absorption and refractive index has been explored, and the results are found to be well in agreement with theory and experiment. Analysis further establishes that absorption coefficient and refractive index can be controlled with precision in semiconductors by the proper selection of doping concentration and an external magnetic field, and hence these media may be used for fabrication of fast cubic nonlinear optical devices under off-resonant transition regime.

In this paper, the effect of built-in-polarization field on lattice thermal conductivity of AlN/GaN/AlN quantum well (QW) has been theoretically investigated. The built-in-polarization field at the hetero-interface of GaN/AlN modifies elastic constant, phonon velocity and Debye temperature of GaN QW. The relaxation time of acoustic phonons (AP) in various scattering processes in GaN with and without built-in-polarization field has been computed at room temperature. The result shows that combined relaxation time of AP is enhanced by built-in-polarization field and implies a longer mean free path. The revised intrinsic and extrinsic thermal conductivities of GaN have been estimated. The theoretical analysis shows that up to a certain temperature the polarization field acts as negative effect and reduces the thermal conductivities. However, after this temperature both thermal conductivities are significantly contributed by polarization field. This gives the idea of temperature dependence of polarization effect which signifies the pyro-electric character of GaN. The intrinsic thermal conductivity at room temperature for with and without polarization mechanism is found to be 491 Wm^-1K^-1 and 409 Wm^-1K^-1, respectively i.e., 20% enhancement. However, the extrinsic thermal conductivity at room temperature for with and without polarization mechanism is found to be 280 Wm^-1K^-1 and 245 Wm^-1K^-1, respectively i.e., 13% enhancement. The method we have developed may be taken into account during the simulation of heat transport in optoelectronic nitride devices to minimize the self-heating processes and in polarization engineering strategies to optimize the thermoelectric performance of GaN alloys.

Nonlinear optical single crystals of L-lysine p-nitrophenolate monohydrate (LLPNP) were grown in aqueous solution by the slow evaporation solution technique (SEST). The grown crystals were subjected to powder X-ray diffraction analysis, (PXRD) and it was found that the title compound was crystallized in the orthorhombic crystal system with noncentrosymmetric space group of $P$2₁2₁2₁. The vibrational frequencies of various functional groups present in the crystal were analyzed using the FTIR spectrum with a wavenumber range between 450 cm${}^{-1}$ and 4000 cm${}^{-1}$. The microhardness analysis of the sample revealed that the crystal belongs to the soft material category. Piezoelectric analysis was performed to measure the value of the piezoelectric (d${}_{33}$) coefficient. Blue light emission of the material was confirmed using the photoluminescence spectrum. Thermal stability of the grown crystal was analyzed using a melting point apparatus and it was found that the LLPNP is stable upto 175${}^{\circ }$C. Etching analysis was performed at various durations, in order to identify the surface properties of the LLPNP crystal.

In the present paper, an analytical study has been presented to examine the acousto–electric interactions in piezoelectric inhomogeneous semiconductor quantum plasma. The analysis is made by deriving the quantum-modified dispersion relation and subsequently deducing the expression of gain coefficient of acoustic wave using quantum hydrodynamic (QHD) model for inhomogeneous semiconductor plasma. The linearly and quadratically varying plasma density profiles have been chosen to investigate the effects of inhomogeneity through density gradient. We address the role of quantum parameter-H, scale length of density variation L and propagation distance z on gain profiles of acoustic wave. It has been found that the presence of these parameters can significantly modify the crossover and resonance characteristics of acoustic wave. Results reveal that the crossover point for wave amplification is found to be greater than unity in inhomogeneous quantum plasma media while the resonance condition is effectively influenced by these parameters in all the considered cases. We found that more acoustic gain would be possible if the acoustic mode propagates from low to high plasma density region in the medium. It is also found that as the medium tends to have high inhomogeneity, more pronounced modifications on resonance characteristics of acoustic wave are expected.

With the aid of a hydrodynamic model of semiconductor-plasmas, a detailed analytical investigation is made to study both the steady-state and the transient Brillouin gain in magnetized non-centrosymmetric III-V semiconductors arising from the nonlinear interaction of an intense pump beam with the internally-generated acoustic wave, due to piezoelectric and electrostrictive properties of the crystal. Using the fact that the origin of coherent Brillouin scattering (CBS) lies in the third-order (Brillouin) susceptibility of the medium, we obtained an expression of the gain coefficient of backward Stokes mode in steady-state and transient regimes and studied the dependence of piezoelectricity, magnetic field and pump pulse duration on its growth rate. The threshold-pump intensity and optimum pulse duration for the onset of transient CBS are estimated. The piezoelectricity and externally-applied magnetic field substantially enhances the transient CBS gain coefficient in III-V semiconductors which can be of great use in the compression of scattered pulses.

Ceramics with the composition Pb_1-xK_2x-3yM_yNb₂O₆ (PKMN) with x = 0.29, y = 0.145 and M = Gd³⁺, Y³⁺ were synthesized by the solid-state reaction route between the corresponding oxides and carbonates. The crystal structure was confirmed by X-ray diffraction (XRD). The temperature dependence of dielectric properties were measured from 35 to 595°C. Well-developed P–E (polarization–electric field) hysteresis loops were observed in the materials. Determining the piezoelectric constants, K_p = 20%, K_t = 49%, d₃₃ = 110, and quality factor, Q_m = 33, reveals that the material Y³⁺-modified PKN can be useful for transducer applications.

Lead zirconate titanate (PZT) is one of the most important piezoelectric materials widely used for underwater sensors. However, PZTs are hard and non-compliant and hence there is an overwhelming attention devoted toward making it flexible by preparing films on flexible substrates by different routes. In this work, the electrochemical deposition of composition controlled PZT films over flexible stainless steel (SS) foil substrates using non-aqueous electrolyte dimethyl sulphoxide (DMSO) was carried out. Effects of various key parameters involved in electrochemical deposition process such as current density and time of deposition were studied. It was found that a current density of 25 mA/cm² for 5 min gave a good film. The morphology and topography evaluation of the films was carried out by scanning electron microscopy (SEM) and atomic force microscopy (AFM), respectively, which showed a uniform morphology with a surface roughness of 2 nm. The PZT phase formation was studied using X-ray diffraction (XRD) and corroborated with Raman spectroscopic studies. The dielectric constant, dielectric loss, hysteresis and I–V characteristics of the film was evaluated.

We present a mathematical model for linear magneto-electro-thermo-elastic continua, as sensors and actuators can be thought of, and prove the well-posedness of the dynamic and quasi-static problems. The two proofs are accomplished, respectively, by means of the Hille–Yosida theory and of the Faedo–Galerkin method. A validation of the quasi-static hypothesis is provided by a nondimensionalization of the dynamic problem equations. We also hint at the study of the convergence of the solution to the dynamic problem to that to the quasi-static problem as a small parameter — the ratio of the largest propagation speed for an elastic wave in the body to the speed of light — tends to zero.

Thin films of single c-domain/single crystal (PbMg_1/3Nb_2/3O₃)_1-x(PbTiO₃)_x, x = 0–0.4 (PMNT) were heteroepitaxially grown on (001)SrTiO₃ and (001)MgO substrates by magnetron sputtering using a quenching process. The lattice parameters of the quenched PMNT thin films were almost the same to the bulk values independently to the lattice parameters of substrates. The quenched PMNT thin films showed stress free structural properties, although the crystal structure of thin films is modified from bulk PMNT. The electromechanical properties are the same to the bulk single c-domain single crystals.

The effect of substrate on the crystalline phase and morphology of the poly (vinylidene fluoride) (PVDF) thin film has been investigated. The solution of PVDF/Hexamethyl phosphoramide (HMPA) was deposited on four different substrates, namely, silicon (Si), glass (SiO₂), indium tin oxide (ITO) coated glass and silver (Ag) coated glass respectively by using the spin coating technique. The crystalline structure was investigated using X-ray diffraction (XRD) and Fourier transform infrared (FTIR) techniques. The morphology was determined using scanning electron microscopy (SEM). XRD demonstrated that the structure of PVDF thin films on each substrate is $\beta$-phase with different orientations of the molecular chains. FTIR results confirmed XRD that the samples contain $\beta$-phase. SEM shows spherulites structure, which is rough and porous, besides, the size of spherulites and the porosity are different for each sample. The size of spherulites is in average diameter range (1–6$\mu$m) and this range is attributed to the $\beta$-phase. The nucleation process of $\beta$-phase on the various substrates attributed either to the match of polymer-substrate or to the electrostatic interaction. Among the substrates used, the ITO substrate exhibited a greater tendency for $\beta$-phase formation.

Using electromagnetic treatment, a detailed analytical investigation of stimulated Brillouin scattering (SBS) has been made for a semiconducting crystal in the presence of an external magnetostatic field. The effect of piezoelectricity (β) and magnetic field has been introduced through equation of motion of lattice vibration and Lorentz force, respectively. The analysis is applied to both cases viz. non-piezoelectric (β = 0) and piezoelectric (β ≠ 0) in the absence (B₀ =0) and the presence (B₀ ≠ 0) of external magnetostatic field. The numerical estimates are made for n-type InSb crystals, taken as representative III–V semiconductor, duly shined upon by pulsed 10.6 μm CO₂ laser. The inclination of applied magnetostatic field with respect to the direction of propagation of pump beam is found to augment the gain coefficient for the onset of stimulated Brillouin scattering. Moreover, the SBS gain coefficient increases with increasing scattering angle and results in a maximum value for the backscattered mode. The backward Brillouin gain is found to be nearly 10⁴ times larger than forward gain when β ≠ 0 and B₀ = 10T. The analysis also suggests the possibility of observing optical phase conjugation reflectivity as high as 10⁶ in the weakly piezoelectric doped semiconductors with moderate magnetostatic field. The numerical estimation suggests that piezoelectric doped III–V semiconductors in the presence of magnetic field are candidate materials for fabrication of cubic nonlinear devices.

Organic nonlinear optical (NLO) single crystal of L-tartaric acid–nicotinamide (LTN) has been grown by slow evaporation solution technique at a constant temperature of 40${}^{\circ }$C. The grown crystals were subjected to various characterization techniques in order to examine their suitability for various applications. Powder X-ray diffraction (PXRD) analysis revealed that the compound is formed without any impurities. Functional groups and formation of the title compound were confirmed using FTIR analysis. Optical behavior of the material was examined using UV–Vis NIR spectrum analysis and the lower cut-off wavelength and optical band gap energy were calculated. Microhardness, dielectric and piezoelectric studies have been carried out at ambient conditions. Electronic properties such as valence electron plasma energy, Penn gap, Fermi energy and electronic polarizability were calculated by Clausius–Mossotti relation. Photoluminescence analysis was carried out to study the luminescence nature of the crystal and its defect states. In addition photoconductivity, etching studies and powder Kurtz and Perry second harmonic generation (SHG) test were carried out.

This technical note presents the solution for flutter instability of a piezoelectric layer subjected to an external voltage which can be modeled as a compressive follower force. The critical ratio of the length to the thickness of the piezoelectric layer for the possible flutter instability is derived given the endurable electric field of the piezoelectric material. The calculation is conducted for piezoelectric layers which are both free and surface bonded on a host structure. Numerical simulations are conducted for the possible flutter instability of different PZT (Lead Zirconium Titanate) materials. The findings in this study should serve as useful benchmarks for the stability analysis of piezoelectric materials.

In the present exploration, the nonlocal stress and strain gradient microscale effects are adopted on the nonlinear dynamical instability feature of functionally graded (FG) piezoelectric microshells under a combination of axial compression, electric actuation, and temperature. To perform this objective, a unified unconventional shell model based on the nonlocal strain gradient continuum elasticity is established to capture the size effects as well as the influence of the geometrical nonlinearity together with the shear deformation along with the transverse direction on the dynamic stability curves. With the aid of an efficient numerical strategy incorporating the generalized differential quadrature strategy and pseudo arc-length continuation technique, the extracted unconventional nonlinear differential equations in conjunction with the associated edge supports are discretized and solved to trace the dynamic stability paths of FG piezoelectric microshells. It is revealed that the nonlocal stress and strain gradient effects result in, respectively, higher and lower values of the nonlinear frequency ratio in comparison with the conventional one due to the stiffening and softening characters associated with the nonlocality and strain gradient size dependency, respectively. In addition, it is observed that within the prebuckling territory, the softening character of nonlocality is somehow more than the stiffening character of strain gradient microsize dependency, while by switching to the postbuckling domain, this pattern becomes vice versa.

Presented herein is an investigation for the nonlinear vibration and stability analysis of rotating functionally graded (FG) piezoelectric nanobeams based on the nonlocal strain gradient theory. The present model can be regarded as a simplified version for the rotating nanowire of biomechanical nanogenerators. The Hamilton principle is used to derive nonlinear equations of motion and their related boundary conditions, which are then discretized to form a set of algebraic equations. Accordingly, the nonlinear vibration frequencies and buckling loads of the nanobeams can be determined by an iterative method. A parametric study of rotational velocity, nonlocal parameter, material length parameter, power-law index, and electrostatic voltage on the dynamic stability behavior of such nanobeams is also presented. In the cantilever case, increasing the nonlocal parameter and material length parameter can result in a stiffness-hardening effect that is unaffected by rotational velocity and the material length parameter to nonlocal parameter ratio. Yet, this has not been reported previously. More importantly, incorporating the effect of geometric nonlinearity on the dynamic responses and stability results of the nanobeams is indispensable. In particular, new observations for the coupling effect of vibration amplitude and power-law index on the electric potential effect are useful for the design of rotating microelectromechanical devices.

In this paper, principal parametric resonance of an axially moving piezoelectric rectangular thin plate under thermal and electric field is investigated. Based on Kirchhoff–Love plate theory and Von Karman theory, the transverse vibration differential equation of a piezoelectric rectangular thin plate under thermal and electric field is derived by using Hamilton’s principle. The dimensionless vibration equation of piezoelectric rectangular thin plate with parametric excitations is discretized by Galerkin’s method. Then, the multiple scales method is applied to derive amplitude-frequency response equation and the stability conditions of the steady-state solution are obtained by Lyapunov stability theory. Numerical method is used to find the influences of specific parameters on the vibration performance and stability of the system. Based on the global bifurcation diagram and corresponding response diagram, the influences of bifurcation control parameters on the nonlinear dynamic characteristics of the system are discussed. Numerical results illustrate that the system amplitude frequency characteristic curve presents soft spring characteristics. There are periodic and chaotic motions with the increase of velocity and the central temperature difference, and the decrease of plate thickness and velocity will result in the decrease of chaotic threshold. The results also show that increase the velocity perturbation amplitude can prolong the chaotic motion.

In this paper, a thorough analysis is conducted to examine the propagation characteristics of SH surface waves in a layered medium with a nanoscale piezoelectric guiding layer deposited on an isotropic elastic substrate. Specifically, a two-dimensional analytical model is established, within which the effects of strain gradient, electric field gradient, inertia gradient, and flexoelectricity are considered, as well as interfacial imperfections at the interface between the piezoelectric guiding layer and the elastic substrate, which are characterized by spring models. Within the framework of the variational principle, the governing equations, boundary conditions, and continuity conditions at the interface are derived. Based on these equations, the dispersion relations for SH surface waves are deduced and numerically solved for both the electrically open-circuit and electrically short-circuit cases. A comprehensive investigation of the dispersion relations for the fundamental mode of SH surface waves is subsequently provided, with a detailed discussion on the influence of critical factors. The developed theoretical model, encompassing various size effects observed in nano-scale structures, enables a more precise prediction of surface wave propagation behavior, thereby enhancing the design and application of surface acoustic wave devices.