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The effect of boron weight percentage in the camphoric carbon target of pulsed laser deposition on the preparation of boron-doped amorphous carbon (a-C:B) films has been studied using standard measurement techniques. XPS results showed the a-C:B films bonding properties almost unchanged at lower Bwt% up to 10 Bwt%, after which it changes with the increase of Bwt%, indicating increasing doping concentration with increase of Bwt% in the target. This phenomenon is further supported by FTIR and Visible-Raman spectroscopy analyses. The variation of bonding and structural properties are also correlated with the optical gap (E_g) and electrical resistivity (ρ) characteristics which are related to successful doping of B for low content of B in the amorphous carbon (a-C) films as the bonding, structural and E_g remain almost unchanged, and the ρ decreased untill the film deposited at 10 Bwt%. Since both the E_g and ρ decrease sharply with higher Bwt%, this phenomenon can be related to the graphitization.