Narrow Results

This paper presents the experimental results of nMOS quantum dot gate field-effect transistor (QDG-FET) based four-state inverter fabricated and tested with Si/SiO₂ and Ge/GeO₂ quantum dots. The site-specific self-assembly of SiOx-cladded Si and GeOx-cladded Ge quantum dot layers in the gate region implements both the driver and load FETs in enhancement nMOS inverters. A four-state inverter will allow the reduction of FET count in logic block in microprocessors.

This paper describes fabrication of Quantum Dot Gate n-FETs using SiOx-cladded Si quantum dot self-assembled on the tunnel gate oxide. Experimental I-V characteristics exhibiting 4-states are presented. Simulation is presented for the operation of viable 4-state SRAMs using QDG-FETs.

This paper describes the fabrication of quantum dot gate (QDG) n-FETs using GeOx-cladded Ge quantum dot self-assembled on tunnel gate oxide. Experimental I–V characteristics exhibiting 4-states are presented. Simulations are presented for the operation of a viable 8-state SRAM using QDG-FETs.