[Author: Khan, B] AND [Keyword: QDGFET] : Search

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Search name	Searched On	Run search
[Author: Juan, A] AND [Keyword: Sulfur] (2)	27 Mar 2025	Run
[Author: Khan, B] AND [Keyword: QDGFET] (2)	27 Mar 2025	Run
[Author: Li, Wei] AND [Keyword: Quartz] (1)	27 Mar 2025	Run
[Author: Soga, T] AND [Keyword: Carbon] (3)	27 Mar 2025	Run
[Author: Faci, A] AND [Keyword: Quartz] (1)	27 Mar 2025	Run

articleNo Access
Design and Simulation of 4-State SRAMs Using 4-State Quantum Dot Gate (QDG) FETs
- B. Khan,
- B. Saman,
- A. Almalki,
- R. H. Gudlavalleti,
- J. Chandy,
- E. Heller, and
- F. C. Jain
International Journal of High Speed Electronics and Systems31 Jul 2024
Preview Abstract
This paper describes fabrication of Quantum Dot Gate n-FETs using SiOx-cladded Si quantum dot self-assembled on the tunnel gate oxide. Experimental I-V characteristics exhibiting 4-states are presented. Simulation is presented for the operation of viable 4-state SRAMs using QDG-FETs.
chapterNo Access
Design and Simulation of 4-State SRAMs Using 4-State Quantum Dot Gate (QDG) FETs
- B. Khan,
- B. Saman,
- A. Almalki,
- R. H. Gudlavalleti,
- J. Chandy,
- E. Heller, and
- F. C. Jain
Nanoelectronics, Nanophotonics, Quantum and Emerging Technologies05 Dec 2024
Preview Abstract
This paper describes fabrication of Quantum Dot Gate n-FETs using SiOx-cladded Si quantum dot self-assembled on the tunnel gate oxide. Experimental I-V characteristics exhibiting 4-states are presented. Simulation is presented for the operation of viable 4-state SRAMs using QDG-FETs.

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