Narrow Results

The research used a DC sputtering system to grow indium nitride compound doped oxygen sensing film, which could be applied in the fabrication of relative humidity sensor. In this study, the design of two specific substrates, including silicon substrate and anodic aluminum oxide (AAO) substrate, were of some uses for relative humidity sensor fabrication to enhance the sensitivity. Besides, the influence of different substrates on responsivity was also explored to verify the sensing performances of indium nitride compound doped oxygen element in relative humidity sensor. The resistance response of InN:O sensing device using silicon substrate was better than that using AAO substrate. The RH adsorption and desorption time of InN:O sensing device using silicon substrate were 94 s and 35 s, respectively. The capacitance response of InN:O sensing device using AAO substrate was better than that using silicon substrate. The RH adsorption and desorption times of InN:O sensing device using AAO substrate were 289 s and 286 s respectively.

This study aims to analyze the spectral properties of plasma produced from rice husk(Rh) using the laser breakdown spectroscopy (LIBS) method. The plasma generation process used the fundamental harmonic (1064 nm) of a Q-switched Nd:YAG laser. Yttrium aluminum garnet (YAG) is a man-made crystalline material. The laser fired pulses with a duration of 10 ns and a repetition rate of 6 Hz. Thus, the energy outputs achieved were 50–200 mJ at the wavelength of 1064 (nm). The silica content in the rice hulls was verified using an XRF measurement, which revealed the presence of silica in the rice hulls in a high percentage. Precise beam focusing was achieved by focusing the laser on the target material. This target material is placed within an atmospheric environment at standard pressure settings. The electron temperature was derived using the Boltzmann diagram method by harnessing experimental data for the linear properties associated with the neutral lines (Si II), (O II), and ion lines (Si I). The use of analytical methodology led to the determination of electron temperature values from 0.79 eV to 1.16 eV for the fundamental harmonic of the laser. At the same time, the electron (ne) density was determined by analyzing the Stark broadening profile associated with the neutral silica line. Furthermore, the study included an additional dimension by determining the plasma properties (electron temperature and electron density) by adjusting the laser energy on the target surface longitudinally along the path of the plasma plume.

We study the zeros of the finite truncations of the alternating Dirichlet series expansion of the Riemann zeta function in the critical strip. We do this with an (admittedly highly) ambitious goal in mind. Namely, that this series converges to the zeta function (up to a trivial term) in the critical strip and our hope is that if we can obtain good estimates for the zeros of these approximations it may be possible to generalize some of the results to zeta itself. This paper is a first step towards this goal. Our results show that these finite approximations have zeros near every vertical line (so no vertical strip in this region is zero-free). Furthermore, we give upper bounds for the imaginary parts of the zeros (the real parts are pinned). The bounds are numerically very large. Our tools are: the inverse mapping theorem (for a perturbative argument), the prime number theorem (for counting primes), elementary geometry (for constructing zeros of a related series), and a quantitative version of Kronecker's theorem to go from one series to another.