Narrow Results

We have fabricated, characterized and compared the performance of lateral enhancement-mode GaN MOSFETs on as-grown and RIE-etched surfaces with 900 and 1000°C gate oxide annealing temperatures. Both subthreshold swing and field effect mobility show 1000°C is the optimal annealing temperature for the PECVD gate oxide in our MOSFET process.

Rotationally Invariant Estimators (RIE) are a new family of covariance matrix estimators based on random matrix theory and free probability. The family RIE has been proposed to improve the performance of an investment portfolio in the Markowitz model’s framework. Here, we apply state-of-the-art RIE techniques to improve the estimation of financial states via the correlation matrix. The Synthesized Clustering (SYNCLUS) and a dynamic programming algorithm for optimal one-dimensional clustering were employed to that aim. We found that the RIE estimations of the minimum portfolio risk increase the Active Information Storage (AIS) in the American and European markets. AIS’s local dynamic also mimics financial states’ behavior when estimating under the one-dimensional clustering algorithm. Our results suggest that in times of financial turbulence, RIE estimates can be of great advantage in minimizing risk exposure.

We have fabricated, characterized and compared the performance of lateral enhancement-mode GaN MOSFETs on as-grown and RIE-etched surfaces with 900 and 1000°C gate oxide annealing temperatures. Both subthreshold swing and field effect mobility show 1000°C is the optimal annealing temperature for the PECVD gate oxide in our MOSFET process.