Co(5 nm)/Dy(tDyDy)/Co(20 nm)/S and Ni(5 nm)/Dy(tDyDy)/Ni(20 nm)/S trilayer films are prepared by electron-beam sputtering to investigate the influence of dysprosium layer thickness (tDyDy) and thermal annealing on the crystal structure, magnetoresistance (MR) and magnetic properties of thin films. The thickness of Dy layer changed in the range from 1 nm to 20 nm. The samples annealed for 20 min at 700 K. Electron diffraction patterns reveal that the as-deposited and annealed systems Co/Dy/Co and Ni/Dy/Ni had fcc-Co + hcp-Dy and fcc-Ni + hcp-Dy phase state, respectively. It is also shown that at the tDyDy = 15 nm the transition from amorphous to crystalline structures of Dy layer is observed. An increase in the Dy layer thickness results in changes in the MR and magnetic properties of the trilayer systems. It is shown that MR is most thermally stable against annealing to 700 K at tDyDy = 15 nm for Co/Dy/Co as well as for Ni/Dy/Ni. For tDyDy = 15 nm the, value of MR for both system increases by two times compared to those of pure ferromagnetic (FM) samples. The coercivity (Bcc), remanent (Mrr) and saturation (Mss) magnetization of the in-plain magnetization hysteresis loops are related to the Dy layer thickness too. The coercivity depends on the FM materials type and diffusion processes at the layer boundary. Accordingly, Mrr and Mss are reduced with tDyDy increasing before and after annealing for both trilayer systems.