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This paper describes the recent advancements in the development of nanoelectronic SONOS nonvolatile semiconductor memory (NVSM) devices and technology, which are employed in both embedded applications, such as microcontrollers, and 'stand-alone', high-density, memory applications, such as cell phones and memory 'sticks'. Multi-dielectric devices, such as the MNOS devices, were among the first NVSM; however, over the ensuing years the double polysilicon, floating-gate device has become the dominant semiconductor NVSM technology. Today, however, questions arise as to future scaling and cost effectiveness of floating gate technology – questions, which have sparked renewed interest in SONOS technology. The latter offers a single polysilicon device structure with reduced lithography steps together with compact cell layouts - compatible with 'standard' CMOS technology for cost effectiveness. In addition, SONOS technology offers performance features, such as reduced erase and write voltage levels to ease the design of peripheral memory circuits with a decrease in electric fields and localized charge storage for improved reliability and multi-bit storage, and ease of memory testing. A special feature of SONOS technology is radiation hardness, which makes this technology ideal for advanced Space and Military systems. SONOS devices use ultra-thin tunnel oxides (2nm) and operate with 'modified' Fowler-Nordheim and 'direct' tunneling in both erase and write (program) modes. A thicker tunnel oxide SONOS device (5nm), called the NROM™ device, uses 'hot electron injection for programming and 'hot hole band-to-band tunneling' for erase. The NROM™ device provides spatially isolated, two-bit storage with the possibility of multi-level charge (MLC) storage at each bit location. This paper describes the physical electronics for these device structures and their erase/write, retention and endurance characteristics. In addition, several novel SONOS device structures are discussed as potential candidates for future NVSM.

While surface patterns are effective in improving tribological properties, nevertheless they alter the surface wettability, which will in turn affect the surface–lubricant interactions. When there is a shortage of lubricant on a patterned surface, the lubricant stored inside the cavities will be extracted to compensate the surface lubricant dissipation. Additionally, the lubricant retention effect provided by the cavities is competing with the release of the lubricant. With weak surface–lubricant interaction, the retention is limited. Therefore, the lubrication will have a sudden failure, giving a dramatic transition to abrasive wear. To improve the performance of polar lubricants on hydrophobic polymer surfaces, both topographical and selective surface modifications were incorporated on injection molded polypropylene surfaces. Distinctive lubrication improvement was observed when the surface structure density for the lubricant storage was high, and the release of the lubricant was controlled by the interaction with the selectively modified surfaces.

Learning organisations facilitate the acquisition of new knowledge and skills for both organisations and their members, enabling the application of the latest insights in a dynamic environment. This study addresses a research gap by constructing a model identifying the factors influencing learning organisations and their subsequent impact. The research delves into uncovering the catalysts behind learning organisations concerning the career advancement of information technology (IT) employees and their intent to remain in their roles. The study, conducted in a developing country, India, employs an explanatory research design to explore the interrelationship between learning organisations, career progression and employee retention. Primary and secondary data have been used for this study. The primary data has been collected from 389 IT sector employees at various employment positions in Chennai through a structured and standard questionnaire based on the Dimensions of Learning Organizations Questionnaire (DLOQ) by Watkins, KE and Marsick, VJ (2023) [Rethinking workplace learning and development catalyzed by complexity. Human Resource Development Review, 22(3), 333-344. doi:10.1177/15344843231186629], demonstrating a high reliability at 96.4%.

This paper explores how employees' perception of an organization's innovativeness impacts their desire to continue an association with the organization. The study uses Structural Equation Modeling — LISREL to explore the relationship between latent constructs of the employees' Perceived Job Satisfaction, and Perceived Organizational Innovativeness (PORGI) with their desire for (employment) Continuance with the organization. PORGI is measured through perceived innovation management, organizational career culture, personnel and innovation management policies. The latent construct of "Employee Continuance" is measured through loyalty and a desire to stay. The latent construct of Job Satisfaction is measured by the perceived job satisfaction of the employees.

A survey was conducted among Information Systems and Technology (IS&T) employees and the data was analyzed using LISREL confirmatory factor analysis. The results indicate that Perceived Organizational Innovativeness and Job Satisfaction have significant impact on employee retention. Employees that perceived the organization as being innovative demonstrated higher levels of loyalty and had a higher desire to stay connected with their organization. The study concludes that it behooves organizations to support innovative technologies, if only to improve employee retention. Additional organizational implications and technological adoption strategies to strengthen employee retention are discussed.

Photosensitizers currently used for photodynamic therapy of cancer show enhanced accumulation in tumor tissue but lack cancer cell specificity. To augment cellular uptake, the targeting of pyropheophorbide-a to carbohydrate-binding components of cancer cells was explored. Galactose was attached to pyropheophorbide-a at positions 17² and 20. Since the modification at position 17² removed a carboxylic group, which is relevant for cell specificity, this study evaluated the relative contribution of galactosyl and carboxyl groups at either position 17² or 20, with or without a (hexyloxy)ethyl at position 3, to cellular uptake by human epithelial cancer cells. The subcellular deposition was monitored using fluorescence microscopy and the photoreaction was quantified using biomarkers. The results demonstrated that any galactose addition suppresses transmembrane diffusion and promotes endocytosis and lysosomal accumulation. An anionic group at position 17² or 20 enhances lysosomal retention. Neutralization of the carboxylic group at position 17² facilitates transfer to mitochondria/endoplasmatic reticulum and promotes tumor cell-specific retention. Replacing (hexyloxy)ethyl with an ethyl group at position 3 increased both cellular uptake and egress but did not alter subcellular localization. These findings suggest that specific neutral galactosylated pheophorbides may provide an enhanced therapeutic effect for those tumor types that do not retain unmodified pyropheophorbide. However, the galactose conjugates also serve as substrates for preferential uptake by liver cells resulting in hepatic sequestration, reduced systemic distribution, and lower accumulation in tumor tissue.

This paper investigates a treated fly ash to act as a synthetic zeolite to remediate soils polluted with heavy metals and metalloids (As, Pb, Cu, Zn, Fe, Cd and Mn). Four types of such 'zeolites' were synthesized by hydrothermal treatment of a calcareous fly ash derived from Greek lignite-fired power plants: two with excess of sodium hydroxide in a solid/liquid ratio of 50 g.L^-1, and two with excess of fly ash in a solid/liquid ratio of 100g.L^-1. Soil samples were obtained from a former mining site at Lavrion, Greece. Mobilization and transfer of metals to the retention agents was effected by using HCl aq 1M, with satisfactory results with respect to As, Pb, Cu, Mn, andCd. The great variety of metal complexes in soil was found to be of major importance for the effectiveness of the overall process. The final products were solidified either on their own, or by using additives such as lime and cement.

Auricular reconstruction is a challenging issue. It can either be performed surgically or by the use of prosthesis. Definitive auricular prosthesis can be retained by craniofacial implants. Temporary (interim) prosthesis can be retained using adhesives, engaging anatomical undercuts and using mechanical means of retention-like spectacles. This case report proposes a new mechanical means of retention for a temporary auricular prosthesis, which can be suitable for non-eyeglass wearing females or for female patients who refuse to wear eyeglass for retaining their prosthesis.

This paper describes the recent advancements in the development of nanoelectronic SONOS nonvolatile semiconductor memory (NVSM) devices and technology, which are employed in both embedded applications, such as microcontrollers, and 'stand-alone', high-density, memory applications, such as cell phones and memory 'sticks'. Multi-dielectric devices, such as the MNOS devices, were among the first NVSM; however, over the ensuing years the double polysilicon, floating-gate device has become the dominant semiconductor NVSM technology. Today, however, questions arise as to future scaling and cost effectiveness of floating gate technology – questions, which have sparked renewed interest in SONOS technology. The latter offers a single polysilicon device structure with reduced lithography steps together with compact cell layouts - compatible with 'standard' CMOS technology for cost effectiveness. In addition, SONOS technology offers performance features, such as reduced erase and write voltage levels to ease the design of peripheral memory circuits with a decrease in electric fields and localized charge storage for improved reliability and multi-bit storage, and ease of memory testing. A special feature of SONOS technology is radiation hardness, which makes this technology ideal for advanced Space and Military systems. SONOS devices use ultra-thin tunnel oxides (2nm) and operate with 'modified' Fowler-Nordheim and 'direct' tunneling in both erase and write (program) modes. A thicker tunnel oxide SONOS device (5nm), called the NROM™ device, uses 'hot electron injection for programming and 'hot hole band-to-band tunneling' for erase. The NROM™ device provides spatially isolated, two-bit storage with the possibility of multi-level charge (MLC) storage at each bit location. This paper describes the physical electronics for these device structures and their erase/write, retention and endurance characteristics. In addition, several novel SONOS device structures are discussed as potential candidates for future NVSM.