We have deposited TiOxNy thin films on Si(100) substrates at 500 °C using RF PECVD system. Titanium iso-propoxide was used as precursor with different nitrogen flow rate to control oxygen and nitrogen contents in the films. Changes of chemical states of constituent elements in the deposited films were examined by XPS analysis. The data showed that with increasing nitrogen flow rate, the total amounts of nitrogen and titanium were increased while that of oxygen was decreased, resulting in a binding energy shift toward high energy side. The characteristics of film growth orientation and structure as well as morphology change behavior were also analyzed by XRD, TED, FT-IR, TEM, and SEM. Deposition at higher nitrogen flow rate results in finer clusters with a nanograin size and more effective photocatalytic TiOxNy thin films with hydrophilic surface.
