System Upgrade on Tue, May 28th, 2024 at 2am (EDT)
Existing users will be able to log into the site and access content. However, E-commerce and registration of new users may not be available for up to 12 hours.For online purchase, please visit us again. Contact us at customercare@wspc.com for any enquiries.
Results: 1 - 2of2
Save this search
Please login to be able to save your searches and receive alerts for new content matching your search criteria.
Design and Simulation of 4-State SRAMs Using 4-State Quantum Dot Gate (QDG) FETs
Preview AbstractThis paper describes fabrication of Quantum Dot Gate n-FETs using SiOx-cladded Si quantum dot self-assembled on the tunnel gate oxide. Experimental I-V characteristics exhibiting 4-states are presented. Simulation is presented for the operation of viable 4-state SRAMs using QDG-FETs.
8-State SRAMS Based on Cladded GE Quantum Dot Gate FETS
Preview AbstractThis paper describes the fabrication of quantum dot gate (QDG) n-FETs using GeOx-cladded Ge quantum dot self-assembled on tunnel gate oxide. Experimental I–V characteristics exhibiting 4-states are presented. Simulations are presented for the operation of a viable 8-state SRAM using QDG-FETs.