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We report the first experimental results for noise-equivalent power (NEP) and noise-equivalent temperature difference (NETD) of single-crystal ErAs:InAlGaAs, zero-bias rectifier diodes coupled to free space quasi-optically in the THz region. At a frequency of 639 GHz, an optical NEP of 4.0×10⁻¹²W/Hz^1/2 is measured with the rectifier coupled to a quasi-plane-wave coherent source through a single-turn square spiral antenna. With a broadband thermal (hot water) source, an NETD of 120 mK is measured from the same device. Antenna radiation patterns at 100 GHz and 639 GHz are also presented.

Silicon carbide (SiC) unipolar devices have much higher breakdown voltages than silicon (Si) unipolar devices because of the ten times greater electric field strength of SiC compared with Si. 4H-SiC unipolar devices have higher switching speeds due to the higher bulk mobility of 4H-SiC compared to other polytypes. In this paper, four commercially available SiC Schottky diodes with different voltage and current ratings, VJFET, and MOSFET samples have been tested to characterize their performance at different temperatures ranging from -50°C to 175°C. Their forward characteristics and switching characteristics in this temperature range are presented. The characteristics of the SiC Schottky diodes are compared with those of a Si pn diode with comparable ratings.

Having long been the realm of molecular chemistry, astronomy, and plasma diagnostics, the upper millimeter-wave band (∼100 to 300 GHz) and the THz region above it have recently become the subject of heightened activity in the engineering community because of exciting new technology (e.g., sub-picosecond optoelectronics) and promising new “terrestrial” applications (e.g., counter-terrorism and medical imaging). The most challenging of these applications are arguably those that demand remote sensing at a stand-off of roughly 10 m or more between the target and the sensor system. As in any other spectral region, remote sensing in the THz region brings up the complex issues of sensor modality and architecture, free-space electromagnetic effects and components, transmit and receive electronics, signal processing, and atmospheric propagation. Unlike other spectral regions, there is not much literature that addresses these issues from a conceptual or system-engineering viewpoint. So a key theme of this chapter is to review or derive the essential engineering concepts in a comprehensive fashion, starting with fundamental principles of electromagnetics, quantum mechanics, and signal processing, and building up to trade-off formulations using system-level metrics such as noiseequivalent power and receiver operating characteristics. A secondary theme is to elucidate aspects of the THz region and its incumbent technology that are unique, whether advantageous or disadvantageous, relative to other spectral regions. The end goal is to provide a useful tutorial for graduate students or practicing engineers considering the upper mm-wave or THz regions for system research or development.

The feasibility of CMOS circuits operating at frequencies in the upper millimeter wave and low sub-millimeter frequency regions has been demonstrated. A 140-GHz fundamental mode VCO in 90-nm CMOS, a 410-GHz push-push VCO in 45-nm CMOS, and a 180-GHz detector circuit in 130-nm CMOS have been demonstrated. With the continued scaling of MOS transistors, 1-THz CMOS circuits will be possible. Though these results are significant, output power of signal generators must be increased and acceptable noise performance of detectors must be achieved in order to demonstrate the applicability of CMOS for implementing practical terahertz systems.

Power semiconductor devices are important for numerous applications with power conversion being an important one. Wide energy gap semiconductors SiC and GaN have properties that make them attractive for such applications. Among these properties are high thermal conductivity, high breakdown electric field, wide energy gap, low intrinsic carrier concentration, high thermal stability, high saturation velocity and chemical inertness. These lead to low on-resistance, high breakdown voltage, high frequencies, small volume, and small passive inductors and capacitors. These desirable properties are offset by the higher material costs and higher defect densities. Although wide energy gap devices have been in development for many years, only recently have they become available commercially. Their main competition is silicon power devices with breakdown voltages up to 8000 V and very high surge current capacity. However, silicon power devices are approaching their material limits and wide energy gap devices are beginning to have an impact in the power electronics space. SiC has the advantage of substrates with diameters approaching 150 mm and the ability to grow thermal SiO₂. GaN has the heterojunction advantage, but no viable substrate technology. In fact, a large portion of SiC production is used for GaN substrates. GaN material development has also benefited significantly from the development of optical devices, e.g., light-emitting diodes and lasers.