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Ga-doped ZnO (GZO)/metal/GZO structures were fabricated on glass substrates to be the transparent conducting layers in this study. GZO films and metal films were deposited at room-temperature by a radio-frequency sputter and a thermal evaporator, respectively. The GZO/Ag/GZO (GAG) structures had poor electrical and optical properties due to the formation of Ag islands on the GZO layer. A 1-nm Cu seed layer was deposited on the GZO layer to fabricate the GZO/Ag/Cu/GZO (GACG) structure to improve its electrical and optical properties. The GACG structure had sheet resistance of 9 $\mathrm{\Omega }$, average visible transmittance of 86% and figure of merit of $2.5\times 10^{-2}$${\mathrm{\Omega }}^{-1}$. In addition, the sheet resistance of the GACG structure kept almost the same after annealing at $300^{\circ }$C in atmosphere for more than 5 h, which showed good thermal stability.

Thin film technology is significant in technological progress and modern research because it allows for the production of optoelectronic devices with improved characteristics. Because of its superior chromatic efficiency, tungsten oxide (WO₃) is one of the best candidates for energy-saving applications. In this study, undoped and tin (Sn)-doped WO₃ films were grown on top of WO₃ seed layers directly by a facile hydrothermal route at a temperature as low as 110^∘C for 24h. The seed layers were also deposited on top of glass substrates using spray pyrolysis. The results of tin doping on the structural, optical, and morphological characteristics of the WO₃:Sn films were studied. X-ray diffraction patterns show that peak intensities increase significantly by adding Sn and the films’ crystallinity was improved by rising Sn content. In the visible region, the average optical transmittance is around 13% and the optical bandgap changes from 2.61eV to 2.81eV, by increasing the dopant amount. Finally, the room temperature photoluminescence of samples shows intense green light emissions. The results of this research can be beneficial for the fabrication and performance optimization of electrical and optical devices such as gas sensors, electrochromic devices, and photosensors.

Rod-structured ZnO has grown hydrothermally on the seed layer by varying growth time. The growth mechanism of rod-structured ZnO thin films is studied extensively with the help of characterizing tools. The preferred orientation and c/a ratio are studied with Grazing Incidence X-ray diffraction (GIXRD). The growth mechanism of ZnO rod structure is studied in detailed manner with Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscopy (FESEM). The optical absorption and emission properties of ZnO rods are studied with respect to growth morphology. Ethanol sensing measurements are carried out at room temperature (RT). The nanostructured ZnO films show good response and sensitivity to ethanol gas at RT.