Narrow Results

This research examines the variation in source pocket length at the corner region of source–channel interface (SCi) with hetero-oxide triple metal gate. The investigated DC and analog parameters include energy band profile in ON/OFF state, electric field ($E_{\mathrm{\text{fi}}}$), potential, transconductance ($g_m$), capacitance gate to source and gate to drain ($C_{\mathrm{\text{gs}}}$, $C_{\mathrm{\text{gd}}}$), cut-off frequency ($f_t$), gain bandwidth product, transconductance generation factor, transconductance frequency product, transit time ($\tau$) and for linearity figure of merit it includes $g_{m2}$, $g_{m3}$, ${\mathrm{\text{VIP}}}_2$, ${\mathrm{\text{VIP}}}_3$, ${\mathrm{\text{IIP}}}_3$, 1-dB compression point. The comprehensive study is done with varying lengths of source pocket, and while keeping doping of source pocket same and keeping work function of triple metal gate constant, it shows the enhancement in overall device performance triple metal gate hetero-oxide corner source pocket double gate TFET (TMG-HO-CSP-DGTFET).