Skip main navigation

Cookies Notification

We use cookies on this site to enhance your user experience. By continuing to browse the site, you consent to the use of our cookies. Learn More
×

System Upgrade on Tue, May 28th, 2024 at 2am (EDT)

Existing users will be able to log into the site and access content. However, E-commerce and registration of new users may not be available for up to 12 hours.
For online purchase, please visit us again. Contact us at customercare@wspc.com for any enquiries.

SEARCH GUIDE  Download Search Tip PDF File

  • articleNo Access

    STRESSES AND STRAINS IN THE LEFT VENTRICULAR WALL APPROXIMATED AS A THICK CONICAL SHELL USING LARGE DEFORMATION THEORY

    In this paper, stress and strain equations are developed for the left ventricle mainly to find the influence of the ventricle’s shape on wall stresses. Here, the ventricle is assumed to be a thick-walled truncated conical shell and large elastic deformation theory is applied. Our model is compared to corresponding results approximating the left ventricle as a spherical shell. Clinically relevant parameters such as the myocardial stiffness constant, the stretch ratios and the stresses and strains have been computed using available canine data. The conical model leads to more realistic results than the spherical model and enables one to evaluate stresses and strains from base to apex instead of only at the equatorial region as in a cylindrical model.

  • articleNo Access

    MODELING HETEROSTRUCTURES WITH SCHRÖDINGER–POISSON–NAVIER ITERATIVE SCHEMES, EFFECT OF CARRIER CHARGE, AND INFLUENCE OF ELECTROMECHANICAL COUPLING

    Nano01 Aug 2012

    This paper presents a detailed investigation of the effects of piezoelectricity, spontaneous polarization and charge density on the electronic states and the quasi-Fermi level energy in wurtzite-type semiconductor heterojunctions. This has required a full solution to the coupled Schrödinger–Poisson–Navier model, as a generalization of earlier work on the Schrödinger–Poisson problem. Finite-element-based simulations have been performed on a AlN/GaN quantum well by using both one-step calculation as well as the self-consistent iterative scheme. Results have been provided for field distributions corresponding to cases with zero-displacement boundary conditions and also stress-free boundary conditions. It has been further demonstrated by using four case study examples that a complete self-consistent coupling of electromechanical fields is essential to accurately capture the electromechanical fields and electronic wavefunctions. We have demonstrated that electronic energies can change up to approximately 0.5 eV when comparing partial and complete coupling of electromechanical fields. Similarly, wavefunctions are significantly altered when following a self-consistent procedure as opposed to the partial-coupling case usually considered in literature. Hence, a complete self-consistent procedure is necessary when addressing problems requiring more accurate results on optoelectronic properties of low-dimensional nanostructures compared to those obtainable with conventional methodologies.