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  • articleNo Access

    Sol–gel synthesis and UVB luminescence in Sr2P2O7:Gd3+, Ce3+ phosphors for phototherapy applications

    In this study, a series of Gd3+, Ce3+ doped Sr2P2O7 phosphors synthesized by a novel method utilizing stearic acid sol–gel are reported. Structural analysis performed by X-ray diffraction (XRD) pattern revealed that doping of trivalent lanthanide ions did not change the orthorhombic structure possessed by Sr2P2O7 matrix and also confirmed the phase purity and crystallinity of the phosphor. Scanning electron microscopy (SEM) micrograph confirms its surface morphology and particle size in the range of 50nm to 1μm. Photoluminescence (PL) studies revealed that PL emission for Gd3+ and Ce3+-doped Sr2P2O7phosphor gives significant emissions which are suitable for application in UV-LEDs for phototherapy portable devices.

  • articleNo Access

    Nanostructured ZnO: Building Blocks for Nanoscale Devices

    ZnO is attracting intensive attention for its versatile applications in transparent electronics, UV emitter, piezoelectric devices, chemical sensor and spin electronics. As one of the direct wide band gap semiconductors, it has advantages over GaN due to its larger exciton binding energy, better lattice match on heteroepitaxial growth and availability of single crystal substrate. Large effort has been invested in the growth of nanostructured ZnO to explore its potentials for nanoscale device applications. ZnO nanobelts, nanowires, nanorings, and nanohelixes demonstrate the diversity of ZnO nanostructures family. This review presents recent research on ZnO nanostructures. Issues of synthesis methods, optical, electrical, gas sensing and magnetic properties are summarized. These progresses constitute the basis for developing future applications in nanoscale electronics, optoelectronics, chemical sensor and spintronics.

  • chapterNo Access

    Nanostructured ZnO: Building Blocks for Nanoscale Devices

    ZnO is attracting intensive attention for its versatile applications in transparent electronics, UV emitter, piezoelectric devices, chemical sensor and spin electronics. As one of the direct wide band gap semiconductors, it has advantages over GaN due to its larger exciton binding energy, better lattice match on heteroepitaxial growth and availability of single crystal substrate. Large effort has been invested in the growth of nanostructured ZnO to explore its potentials for nanoscale device applications. ZnO nanobelts, nanowires, nanorings, and nanohelixes demonstrate the diversity of ZnO nanostructures family. This review presents recent research on ZnO nanostructures. Issues of synthesis methods, optical, electrical, gas sensing and magnetic properties are summarized. These progresses constitute the basis for developing future applications in nanoscale electronics, optoelectronics, chemical sensor and spintronics.