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We deposited copper phthalocyanine (CuPc) films on (100) silicon wafers by means of a vacuum evaporation method and investigated the dependence of X-ray diffraction pattern on film thickness. We concluded that the planar molecule of CuPc is stacked normal to the substrate within 700 nm from an interface. Above 700 nm, four types of nearly parallel stacking were also observed. These results show the spontaneous formation of the two-layer structure in CuPc films thicker than 700 nm.
To improve the corrosion resistance of an electro-galvanized steel sheet, we deposited magnesium film on it using a vacuum evaporation method and annealed the films at 250–330°C. The zinc–magnesium alloy is consequently formed by diffusion of magnesium into the zinc coating. From the anodic polarization test in 3% NaCl solution, the films annealed at 270–290°C showed better corrosion resistance than others. In X-ray diffraction analysis, ZnMg2 was detected throughout the temperature range, whereas Mg2Zn11 and FeZn13 were detected only in the film annealed at 310°C. The depth composition profile showed that the compositions of Mg at 270–290°C are evenly and deeply distributed in the film surface layer. These results demonstrate that 270–290°C is a proper temperature range to produce a layer of MgZn2 intermetallic compound to act as a homogenous passive layer.