Modern Physics Letters B

A family of boundary conditions corresponding to exclusion processes is introduced. This family is a generalization of the boundary conditions corresponding to the simple exclusion process, the drop-push model, and the one-parameter solvable family of pushing processes with certain rates on the continuum.^1–3 The conditional probabilities are calculated using the Bethe ansatz, and it is shown that at large times they behave like the corresponding conditional probabilities of the family of diffusion-pushing processes introduced in Refs. 1–3.

We introduce a Conserved Noise Restricted Solid-On-Solid (CNRSOS) model. The surface width W of the model grows as t^β_cn at the beginning with β_cn≈0.12 and becomes saturated at L^α_cn for t≫L^z with α_cn≈0.49, where L is the system size. We find a one-to-one mapping between the CNRSOS model and the Restricted Curvature (RC) model by interpreting the height difference of the RC model as the height of the CNRSOS model. Therefore, there exist some relations, α_rc-1=α_cn and , where the subscripts rc and cn are for the RC model and the CNRSOS model respectively.

The problem of the geometrical barrier is solved for the vortex fragment entering from the corners of a superconducting strip, placed into a perpendicular magnetic field. A single-vortex Gibbs potential is constructed for the first time taking into account the actual current/field distribution in a sample of rectangular cross-section. The dependence of the vortex inclination angle as well as the vortex altitude on the external magnetic field is determined. Geometrical barrier-suppression field is found at which near-the-edge vortices start penetrating deep into the strip.

High pressure electrical resistivity studies were carried out on the high temperature superconductor Nd_1-xCa_xBa₂Cu₃O_7-δ for various calcium concentrations x=0.00, 0.03, 0.06 and 0.10 obtained by the solid-state reaction method. The electrical resistivity study was performed using the four-probe technique with a Bridgman opposed anvil device. All four samples show an initial drastic fall in electrical resistivity up to a pressure of around 3 GPa that remains almost constant up to 8 GPa.

To gain insight into the electronic properties of MoSe₂ (molybdenum selenide, also known as drysdallite), electronic structure calculations, total and projected density of states, crystal orbital overlap population and Mulliken population analysis were performed. The calculated energy bands depict a semiconductor behavior with a direct gap (at K) of 0.91 eV and an indirect gap (from Γ to K) of 3.6 eV, respectively. Total and projected density of states provided information about the contribution from each orbital of each atom to the total density of states. Moreover, the bonding strength between some atoms within the unit cell was obtained. Mulliken population analysis corroborates the electron filling of the Mo d_z2 orbitals in agreement with another experimental and theoretical results.

Glasses from the two systems, xFe₂O₃ · (100-x)[P₂O₅ · CaO] and x(Fe₂O₃ · V₂O₅) · (100-x)[P₂O₅ · CaO] with 0 ≤ x ≤ 50 mol% were prepared under the same conditions and characterized by IR spectroscopy. The way in which Fe₂O₃ and (Fe₂O₃ · V₂O₅) influences the local structure of these glasses was analyzed.