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ELECTRONIC STRUCTURE CALCULATIONS FOR MoSe₂ USING EXTENDED HUCKEL TIGHT-BINDING METHOD

DONALD H. GALVAN

Centro de Ciencias de la Materia Condensada-UNAM, Apartado Postal 2681, CP 22800, Ensenada, B. C., México

https://doi.org/10.1142/S0217984904006561Cited by:2 (Source: Crossref)

Abstract

To gain insight into the electronic properties of MoSe₂ (molybdenum selenide, also known as drysdallite), electronic structure calculations, total and projected density of states, crystal orbital overlap population and Mulliken population analysis were performed. The calculated energy bands depict a semiconductor behavior with a direct gap (at K) of 0.91 eV and an indirect gap (from Γ to K) of 3.6 eV, respectively. Total and projected density of states provided information about the contribution from each orbital of each atom to the total density of states. Moreover, the bonding strength between some atoms within the unit cell was obtained. Mulliken population analysis corroborates the electron filling of the Mo d_z2 orbitals in agreement with another experimental and theoretical results.

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