Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals

The following sections are included:

• Dedication
• Preface
• About the Author
• Acknowledgements
• Contents

The following sections are included:

• Introduction
• Thermal Diffusion
• Clustering and Precipitation
• Influence of Another Impurity on Diffusion Processes
• Influence of Crystal Deformation
• Influence of Oxidation
• High-Concentration Diffusion of Phosphorus
• Diffusion of Ion-Implanted Impurities
• Clustering and Precipitation in Ion-Implanted Layers
• Evolution of Defect Subsystem in Implanted Crystals
• “Hot” Ion Implantation and Radiation-Enhanced Diffusion of Impurity Atoms
• Basic Behavior Characteristics of the Diffusion of Impurity Atoms in Semiconductor Silicon
• Bibliography

The following sections are included:

• Microscopic Mechanisms Underlying the Diffusion of Impurity Atoms
• Formation of Defects in Silicon Crystals
  • Scheme of quasichemical reactions between the species of nonequilibrium defect–impurity system of silicon crystals
• Macroscopic Description of the Processes of Transport of Atomic Particles
  • Original set of equations describing diffusion processes and quasichemical reactions of impurity atoms and point defects in a nonequilibrium state with nonuniform distributions of the species of the defect–impurity system of silicon crystals
• Estimation of the Conditions for a Local Thermodynamic Equilibrium Between Separate Species of the Nonequilibrium Defect–Impurity System of Silicon Crystals
• Bibliography

In this chapter, transformation of the original set of equations that describe the diffusion and quasichemical reactions of atomic particles is carried out for the purpose of practical application to model the doping processes of silicon crystals.

One of the basic goals of this book is to get a deep understanding of the physics of diffusion of impurity atoms and point defects in the course of doping of silicon crystals. To achieve this goal, the characteristic diffusion processes will be investigated. We limit our investigation to diffusion phenomena which are characteristic for modeling the doping processes used in the technology of manufacturing semiconductor devices and integrated microcircuits. For these phenomena, partial models will be constructed and analyzed. Their construction will be based on simplification of the set of the generalized equations describing diffusion processes. Such an approach allows one to follow the character of the assumptions used in constructing the models for the doping processes under consideration. From the physical point of view, four characteristic cases of solid phase diffusion will be described…

The following section is included:

• Index