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The Handbook Series on Semiconductor Parameters will consist of 5 volumes and will include data on the most popular semiconductor materials. These volumes aim to be a basic reference for scientists, engineers, students and technicians working in semiconductor materials and devices. The books have been kept compact but comprehensive and contain the values of frequently needed parameters selected and commented by leading experts on these materials. The first volume will include data on Si, Ge, diamond, GaAs, GaP, GaSb, InAs, InP, and InSb.
Contents:- Volume 1:
- Silicon (Si) (M E Levinshtein & S Rumyantsev)
- Germanium (Ge) (L E Vorobyev)
- Diamond (C) (G Sh Gildenblat & P E Schmidt)
- Gallium Arsenide (GaAs) (M E Levinshtein & S Rumyantsev)
- Gallium Phosphide (GaP) (Yu A Goldberg)
- Gallium Antimonide (GaSb) (A Ya Vul')
- Indium Arsenide (InAs) (M P Mikhailova)
- Indium Phosphide (InP) (N M Shmidt)
- Volume 2:
- Aluminium Gallium Arsenide (AlxGa1-xAs) (Yu A Goldberg)
- Gallium Indium Phosphide (GaxIn1-xP) (Yu A Goldberg)
- Gallium Indium Arsenide (AlxIn1-xAs) (Yu A Goldberg & N M Schmidt)
- Gallium Indium Antimonide (GaxIn1-xSb) (Yu A Goldberg)
- Gallium Arsenide Antimonide (GaAs1-xSbx) (A Ya Vul')
- Indium Arsenide-Antimonide (InAs1-xSbx) (M S Bresler)
- Gallium Indium Arsenide Phosphide (GaxIn1-xAsyP1-y) (Yu A Goldberg & N M Shmidt)
- Gallium Indium Arsenide Antimonide (GaxIn1-xAsySb1-y) (M P Mikhailova)
