Radiation Defect Engineering

The following sections are included:

• Preface

• Contents

The following sections are included:

• Interaction of Light Ions with Single-Crystalline Semiconductors
  • Elastic collisions
  • Inelastic collisions
  • Radiation defect formation in semiconductors under the influence of accelerated ions

• Proton Enhanced Diffusion
  • Dopant redistribution in semiconductors under high temperature proton irradiation
    • Detecting of the proton-enhanced diffusion
    • Theoretical presentations about the influence of the proton irradiation on the impurity diffusion in semiconductors
    • Vacancy model of the enhanced impurity diffusion
    • Two flux model of proton-enhanced diffusion
    • Proton-enhanced diffusion of ionized impurities
    • Applied aspects of proton enhanced diffusion
    • Proton enhanced diffusion in the quantum-scale heterostructures
    • Near-surface proton enhanced diffusion
    • Long-distance effects by proton enhanced diffusion
  • Impurity diffusion into a preliminarily irradiated semiconductor crystal

• Processes of Ion Beam Mixing
  • Theoretical concepts of the physics of radiation enhanced processes at the metal-semiconductor interface
  • Ion implantation-stimulated processes of the formation of chemical compounds
  • Quantum well and quantum dot proton irradiation-induced intermixing

The following sections are included:

• Nuclear Reactions Involving Charged Particles

• Simulation of Transmutation Doping by Charged Particles

• Experimental Investigation of Transmutation Doping by Charged Particles
  • Silicon
  • Semiconductor compounds A^IIIB^V
  • Other materials

• Potential of the Method of Transmutation Doping with Charged Particles in the Technology of Semiconductor Devices

The following sections are included:

• Doping of Gallium Arsenide and Other III-V Semiconductors
  • Production of radiation defects in gallium arsenide
  • Radiation defect formation in indium phosphide
  • Effect of proton irradiation on the electrical properties of III-V compounds
  • Prospects of using proton irradiation for the development of semiconductor devices based on III-V compounds

• Doping of Silicon with Radiation Defects
  • Radiation defects in silicon irradiated with protons and alpha particles
  • Energy levels of radiation defects in silicon irradiated with protons and alpha particles
  • Production rates and concentration profiles of radiation defects in silicon irradiated with protons and alpha particles
  • Implementation of radiation with protons and alpha particles in the technology of Si-based devices

• Doping of Narrow Bandgap Semiconductors with Radiation Defects

• Doping of Wide Bandgap Semiconductors with Radiation Defects
  • Radiation-induced defects in GaN and related compounds
  • Doping of SiC with radiation defects

The following sections are included:

• Formation of Buried Nanoscale Porous Layers in Semiconductors

• Use of the Porous Layers in the Technology of Semiconductor Devices
  • “Smart-Cut” technology
  • Gettering of impurities by porous layers
  • Proton beam micromachining

The following sections are included:

• References

• Index