The Physics of Semiconductors

The Table of Contents for the book is as follows:

• Preface
• Committees
• Sponsors
• ICPS Opening Addresses
  • M. Cardona
  • K. von Klitzing
  • M. Heiblum
• I. PLENARY PRESENTATIONS
  • 1. The Genesis of the Transistor
  • 2. Electrical Imaging of the Quantum Hall Effect with a SETSE
  • 3. Mesoscopic Physics, an Arena for Fundamental Physics Studies
  • 4. Exciton Polaritons in Semiconductor Microcavities
• II. INVITED PAPERS
• I. BULK AND DYNAMICS
  • 1. Saturation of Fermi Energy in Highly Sn Doped InGaAs
  • 2. Superlocalization in Compensated InSb
  • 3. Carrier Induced Ferromagnetism in Semiconductors and Heterostructures
• II. GROWTH, SURFACES AND INTERFACES
  • 1. Regular Step Bunching and Ordering of Ge Islands on Vicinal Si Surfaces
  • 2. Vertical Arrangement and Wavefunction Control in Structures with 2D Quantum Dots
• III. HETEROSTRUCTURES AND SUPERLATTICES: OPTICAL
  • 1. Coherence Properties of Resonantly Excited Secondary Emission from GaAs Quantum Wells
  • 2. Resonant Spin Amphification — A New Tool for the Study of Spin Coherence in Semiconductors
  • 3. Dynamics of Microcavity Polaritons: A Short Review and Recent Results
  • 4. Multiple Wavelength Laser Emission from Inter-Miniband Transitions in Superlattice Quantum Cascade Structures
  • 5. Optics of Carriers Trapped in Lateral Superlattices
  • 6. Spin Effects in Exciton Condensation in Quantum Wells
• IV. 2D SYSTEMS, HETEROSTRUCTURES AND SUPERLATTICES: TRANSPORT
  • 1. Electron Liquid in Disordered Conductors
  • 2. Ferromagnetic III-V Semiconductors and their Heterostructures
• V. ONE AND ZERO DIMENSIONAL SYSTEMS
  • 1. Microwave Spectroscopy on a Double Quantum Dot
  • 2. The Kondo Effect in a Single-Electron Transistor
  • 3. Optically Probing and Controlling Single Quantum Dots
  • 4. Optical Properties of Low-Dimensional Structures Fabricated by Cleaved Edge Overgrowth
  • 5. Quantum Charge Pumping in an Open Quantum Dot
  • 6. Modification of 1D Ballistic Transport Using an Atomic Force Microscope
• VI. DEFECTS AND IMPURITIES (BULK AND QUANTUM WELLS)
  • 1. Hydrogen and Phosphorus Codoping and Boron and Nitrogen Codoping for the Fabrication of Low Resistivity n-type Diamond: Materials Design from the First Principles Calculation
  • 2. Hydrogen in Silicon: Evidence for Transition-Metal Hydrogen Complexes and Hydrogen Molecules
  • 3. Testing Negative-U in Bistable Dx-Type Donors
  • 4. Carrier Tunneling in High Frequency Electric Fields
• VII. WIDE BAND GAP MATERIALS
  • 1. Surfaces and Growth of Group III-Nitrides
  • 2. Megagauss Cyclotron Resonance in Cubic GaN-Layers
  • 3. Intrinsic Radiative Lifetime of Excitons in InGaN/GaN Quantum Wells
• VIII. NEW MATERIALS AND NEW CONCEPTS
  • 1. Nanoscale Mechanics
  • 2. Self-Assembly of Nanometer Scale Electronics by Biotechnology
  • 3. Nanotubes
• IX. TECHNOLOGY AND DEVICES
  • 1. Watching Chips Work: Picosecond Hot Electron Light Emission from Integrated Circuits
• Concluding Remarks