Formation and electrical properties of anisotype heterojunctions p-Cu2ZnSnSe4 /n-GaAs

The anisotype HJ 𝜌-cu₂ZnSnSe₄/ n-GaAs was obtained, for the first time, by selenization of base metal layers that were previously thermally deposited on a GaAs substrate. The heterostructures created discuss both current-voltage properties and current transmission mechanisms. The forward bias was found to be characterized by currents limited by space charge, tunneling and recombination processes. In the case of reverse bias, currents predominate, which are limited by the space charge in mobility mode.