The amplitude of RTN in nanometer SOI FinFET with different channel shape

In this work we simulate the dependence of the amplitude of the random telegraph noise (RTN) on the gate overdrive (overload) for SOI FinFET with a cross section of rectangular and trapezoidal channels. It is shown that in the sub-threshold area when a single interface charge is detected in the middle of the RTL interface, the amplitude of the RTN is much higher for the cross section of the trapezoidal channel. In contrast, the amplitude of RTN is higher for a rectangle than for a cross section of a trapezoidal channel when the charge of an interface is detected at the upper channel interface. We also consider the dependence of the RTN amplitude on the position along the transistor channel, the charge of a single interface, which is detected at the upper interface, and on the side channel interface.