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Plasma Instability of 2D Electrons in a Field Effect Transistor with a Partly Gated Channel

Aleksandr S. Petrov

Laboratory of 2D Materials’ Optoelectronics, MIPT, Dolgoprudny, Russia

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D. Svintsov

Laboratory of 2D Materials’ Optoelectronics, MIPT, Dolgoprudny, Russia

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M. Rudenko

Laboratory of 2D Materials’ Optoelectronics, MIPT, Dolgoprudny, Russia

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V. Ryzhii

Research Institute of Electrical Communication, Tohoku University, Sendai, Japan

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M. S. Shur

Department of Electrical, Computer, and System Engineering and Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, USA

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https://doi.org/10.1142/9789813223288_0005Cited by:0 (Source: Crossref)

Abstract:

We predict the instability of plasma waves excited by a DC current in the field-effect transistors (FETs) with a partly gated channel. The excitation of plasma waves is due to amplified reflection from the boundary of the gated and ungated regions. The boundary also supports the turbulent edge modes whose increment strongly depends on the ratio of the carrier densities in the two FET regions.

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