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Plasma Instability of 2D Electrons in a Field Effect Transistor with a Partly Gated Channel
Preview AbstractWe predict the instability of plasma waves excited by a DC current in the field-effect transistors (FETs) with a partly gated channel. The excitation of plasma waves is due to amplified reflection from the boundary of the gated and ungated regions. The boundary also supports the turbulent edge modes whose increment strongly depends on the ratio of the carrier densities in the two FET regions.
Plasma Instability of 2D Electrons in a Field Effect Transistor with a Partly Gated Channel
Preview AbstractWe predict the instability of plasma waves excited by a DC current in the field-effect transistors (FETs) with a partly gated channel. The excitation of plasma waves is due to amplified reflection from the boundary of the gated and ungated regions. The boundary also supports the turbulent edge modes whose increment strongly depends on the ratio of the carrier densities in the two FET regions.