GROWTH OF THICK GaN FILMS AND SEEDS FOR BULK CRYSTAL GROWTH
Abstract
The essential steps required to create thick GaN films and seed crystals for bulk crystal growth are described. These include the growth of low dislocation density GaN films by hydride vapor phase epitaxy and the separation of films from their growth substrates. Also addressed are issues of processing thin and thick films to create compliant layer substrates for thick film HVPE growth and chemical mechanical polishing methods to enhance surface morphology and remove material damage free. Growth of both gallium and nitrogen polar films is discussed with key issues identified regarding polarity inversion during growth and impurity incorporation along the -c growth direction. These are illustrated with examples that emphasize the growth of material with low threading dislocation density.
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