EXTREMELY SCALABLE CROSS-POINT TOP-GATED HETEROJUNCTION TUNNELING-TRANSISTORS

Energy efficient hetero-junction tunneling transistors in a simple "cross-point" configuration that utilizes top gates are analyzed for use at extremely scaled sub-10 nm gate-lengths. The active tunneling region comprises of a vertical p++/n+ heterojunction (for example formed at the cross point of p++SiGe/n+Si), where modulation of the energy-bands in the gated n+Si region with a top-gate is used to control the degree of band overlap and tunneling distance and hence current. The sub-threshold swing characteristic of these devices is shown to be potentially highly immune to extreme downscaling to 6 nm gate length allowing for an intact and efficient switching behavior to be retained. The extreme scalability and ultra-low voltage operation could make such cross-point devices useful for alternative applications and architectures that require ultimate energy efficiency.