Next Generation DevicesNo Access

COMPARISON OF MONOLITHIC PASSIVELY MODE-LOCKED LASERS USING In(Ga)As QUANTUM DOT OR QUANTUM WELL MATERIALS GROWN ON GaAs SUBSTRATES

M. T. CROWLEY

Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, NM 87106, USA

Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, NM 87106.

Search for more papers by this author

N. PATEL

Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, NM 87106, USA

Search for more papers by this author

D. MURRELL

Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, NM 87106, USA

Search for more papers by this author

Y.-C. XIN

Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, NM 87106, USA

Search for more papers by this author

A. STINTZ

Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, NM 87106, USA

Search for more papers by this author

, and

L. F. LESTER

Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, NM 87106, USA

Search for more papers by this author

https://doi.org/10.1142/S0129156411007008Cited by:1 (Source: Crossref)

Abstract

In this paper, a technology comparison between monolithic passively mode-locked lasers (MLLs) fabricated from 1.24 μm InAs dots-in-a-Well (DWELL) and 1.25 μm InGaAs single quantum well (SQW) structures grown using elemental source molecular beam epitaxy (MBE) is presented. 5 GHz optical pulses with sub-picosecond RMS jitter, high pulse peak power (1W) and narrow pulse width (< 10 ps) are typical of these monolithic two-section InAs DWELL passive MLLs. An InGaAs single quantum well MLL with the 42% indium is shown to exhibit a superior high-temperature performance. Compared with the typical operating range of the InAs DWELL devices (<60°C), the operation is in excess of 100 °C and is particularly attractive for clocking applications in next generation microprocessors. Based on an 8-band k.p analysis the reduction in the band edge density of states for such a quantum well is discussed.

Keywords:

Remember to check out the Most Cited Articles!
Check out these Notable Titles in Antennas

References

L. Zhang, L. Cheng, A. L. Gray, S. Luong, J. Nagyvary, F. Nabulsi, L. Olona, K. Su, T. Tumolillo, R Wang, C. Wiggins, J. Ziko, Z. Zau, P. M. Varangis, Su, H., and Lester, L. F., "5 GHz Optical Pulses From a Monolithic Two-Section Passively Mode-locked 1250/1310 nm Quantum Dot Laser for High Speed Optical Interconnects", Optical Fiber Communication Conference.Technical Digest.OFC/NFOEC, 3 (2005) . Google Scholar
Gaburro, Z., "Optical interconnect", in Silicon Photonics; 2004; 94, pp.121-176, Pavesi L & Lockwood, D. J., Topics in Applied Physics, Springer Verlag, (2004) . Google Scholar
D. A. B. Miller, Proceedings of the IEEE 88(6), 728 (2000), DOI: 10.1109/5.867687. Web of Science, Google Scholar
G. A. Keeleret al., IEEE J. Sel. Topics Quantum Electron. 9(2), 477 (2003), DOI: 10.1109/JSTQE.2003.813317. Web of Science, Google Scholar
H. Sotobayashiet al., J. Opt. Soc. America B-Optical Physics 19(11), 2803 (2002), DOI: 10.1364/JOSAB.19.002803. Web of Science, Google Scholar
M. Mielke, G. A. Alphonse and P. J. Delfyett, IEEE Photon. Tech. Lett. 15(4), 501 (2003), DOI: 10.1109/LPT.2003.809291. Web of Science, Google Scholar
J.-C. Diels. Apparatus and method for line of sight laser communication. United States Patent, Approved Nov. 30, 2001 2002. Patent Application Serial N0 09/215,420 . Google Scholar
Landan Arissian and Jean-Claude Dieals, Applications of Photonic Technology 6 5260-82, 1 (2003). Google Scholar
Jean-Claude Diels and Ladan Arissian , Applications of stabilized frequency combs to metrology , Proceedings of the International Conference on Coherent and Nolinear Optics, and on Lasers, Applications and Technologies (ICONO/LAT 2005) ( SPIE , 2005 ) . Google Scholar
B. H. Kolner and D. M. Bloom, IEEE J. Quantum Electron. 1, 79 (1986). Web of Science, Google Scholar
K. A. Williams, M. G. Thompson and I. H. White, New Journal of Physics 6, 179 (2004), DOI: 10.1088/1367-2630/6/1/179. Web of Science, Google Scholar
Y.-C. Xin, V. Kovanis, A. L. Gray, L. Zhang, and L. F. Lester, "1.3-µm Quantum Dot Monolithic Multi-Section Passively Mode-Locked Laser," IEEE LEOS 2006 Annual Meeting, Montreal, Canada . Google Scholar
G. T. Liuet al., Electron. Lett. 35(14), 1163 (1999), DOI: 10.1049/el:19990811. Web of Science, Google Scholar
A. Stintzet al., J. Vac. Sci. Tech. B 18(3), 1496 (2000), DOI: 10.1116/1.591412. Web of Science, Google Scholar
Y.-C. Xin, A. Stintz, H. Cao, M. Osinski, and L. F. Lester, " High Temperature Operation (> 100°C) of InGaAs/GaAs All-Active Monolithic Passively-Mode-Locked Single Quantum Well Lasers ", SSDM (2005) . Google Scholar
Y. C. Xinet al., IEEE J. Quantum Electron. 42(7-8), 725 (2006), DOI: 10.1109/JQE.2006.876709. Web of Science, Google Scholar
X. D. Huanget al., Appl. Phys. Lett. 78(19), 2825 (2001), DOI: 10.1063/1.1371244. Web of Science, Google Scholar
X. D. Huanget al., IEEE J. Quantum Electron. 37(3), 414 (2001), DOI: 10.1109/3.918583. Web of Science, Google Scholar
R. L. Sellinet al., Appl. Phys. Lett. 78(9), 1207 (2001), DOI: 10.1063/1.1350596. Web of Science, Google Scholar
M. Kuntzet al., Appl. Phys. Lett. 85(5), 843 (2004), DOI: 10.1063/1.1776340. Web of Science, Google Scholar
Mauro J. Kobrinskyet al., Intel. Technology Journal 8(2), (2004). Google Scholar
Mike Salibet al., Intel. Technology Journal 8(2), (2004). Google Scholar
M. J. W. Rodwell, D. M. Bloom and K. J. Weingarten, IEEE J. Quantum Electron. 25, 817 (1989), DOI: 10.1109/3.17346. Web of Science, Google Scholar
D. J. Dericksonet al., IEEE J. Quantum Electron. 28, 2186 (1992), DOI: 10.1109/3.159527. Web of Science, Google Scholar
M. T. Crowley and et al, IEEE J. Sel. Topics Quantum Electron. 15, 709 (2009), DOI: 10.1109/JSTQE.2009.2015679. Google Scholar
N. Tansu, J.-Y. Yeh and L. J. Mawst, J. Phys.:Condens. Matter. 16, S3277 (2004), DOI: 10.1088/0953-8984/16/31/020. Web of Science, Google Scholar