SPECIAL ISSUE: PAPERS FROM WORKSHOP ON FRONTIERS IN ELECTRONICS 2011; EDITED BY SORIN CRISTOLOVEANU AND MICHAEL SHURNo Access

GaN BASED 3D CORE-SHELL LEDS

XUE WANG

Institute of Semiconductor Technology, Braunschweig University of Technology, 38106 Braunschweig, Germany

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SHUNFENG LI

Institute of Semiconductor Technology, Braunschweig University of Technology, 38106 Braunschweig, Germany

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SÖNKE FÜNDLING

Institute of Semiconductor Technology, Braunschweig University of Technology, 38106 Braunschweig, Germany

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JIANDONG WEI

Institute of Semiconductor Technology, Braunschweig University of Technology, 38106 Braunschweig, Germany

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MILENA ERENBURG

Institute of Semiconductor Technology, Braunschweig University of Technology, 38106 Braunschweig, Germany

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JOHANNES LEDIG

Institute of Semiconductor Technology, Braunschweig University of Technology, 38106 Braunschweig, Germany

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HERGO H. WEHMANN

Institute of Semiconductor Technology, Braunschweig University of Technology, 38106 Braunschweig, Germany

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ANDREAS WAAG

Institute of Semiconductor Technology, Braunschweig University of Technology, 38106 Braunschweig, Germany

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WERNER BERGBAUER

Osram Opto Semiconductors GmbH, 93055 Regensburg, Germany

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MARTIN MANDL

Osram Opto Semiconductors GmbH, 93055 Regensburg, Germany

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MARTIN STRASSBURG

Osram Opto Semiconductors GmbH, 93055 Regensburg, Germany

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, and

ULRICH STEEGMÜLLER

Osram Opto Semiconductors GmbH, 93055 Regensburg, Germany

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https://doi.org/10.1142/S0129156412500085Cited by:2 (Source: Crossref)

Abstract

As a promising novel route towards highly efficient optoelectronic devices, GaN based 3D core-shell light emitting diodes (LEDs) have attracted increased attention in recent years. In comparison to conventional 2D thin film LED, the 3D LED systems using a core-shell geometry with high aspect ratio are a breakthrough in technology with lots of advantages. In this paper, we review our developed growth strategies of these LED systems on Si and sapphire substrates. A catalyst free selective area growth of GaN 3D core-shell LED systems was realized using patterned substrates by metal organic vapor phase deposition in a convenient continuous-flux growth mode. We have recently suggested that the surface polarity plays a crucial role for the morphology of GaN 3D structure growth. In order to analyze the surface polarity of 3D submicron or micron structures, Kelvin probe force microscopy and selective etching techniques have been developed. During the growth of GaN submicron rods and micron columns on patterned SiO_x/sapphire templates, mixed polarity effects could be detected. A new "truncated pyramid + column" growth method was developed to effectively avoid the formation of mixed polarity and realize single N-polar GaN 3D devices. Transmission electron microscopy and spatially and spectrally resolved cathodoluminescence measurements evidently prove the core-shell structure of 3D LED systems.

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GaN BASED 3D CORE-SHELL LEDS

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