Special Issue on 23^rd Connecticut Microelectronics and Optoelectronics Consortium Symposium (CMOC-2014) April 9, Connecticut, USA; Edited by F. Jain, C. Broadbridge and H. TangNo Access

Transient Circuit Model of Memristors

Anas Mazady

Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269, USA

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and

Mehdi Anwar

Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269, USA

E-mail Address: anwara@engr.uconn.edu

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https://doi.org/10.1142/S0129156415200074Cited by:1 (Source: Crossref)

Abstract

We report a transient circuit model of Pt/TiO₂(40nm)/Pt memristor that accurately represents the underlying switching mechanism and can be extended to any other material platforms. The analysis is based on the analytic formulation of dynamical characteristics. The transient circuit model is simulated in Cadence using HSPICE. Rise time and fall times of the 40 nm TiO₂ memristor were calculated to be 11.4 ps and 11.6 ps, respectively. The settling time during ON and OFF switching was determined to be 1.04 ns and 0.78 ns, respectively.

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