Simulation and Modeling of Single Photon Avalanche Diodes
Abstract
A comprehensive SPICE model is developed for single photon avalanche diodes (SPADs). The model simulates both the static and dynamic behaviors of SPADs. Parameters of the model were extracted form experimental data obtained from SPADs designed and fabricated in a standard 0.5μm CMOS process. In this model, the resistive behavior of the device was modeled with an exponential function. Moreover, the device simulated response to incident optical power stimulation is modeled. Experimentally extracted parameters were incorporated into the model, and simulation results agreed with the experimental data.
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