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GEOMETRY AND BIAS DEPENDENCE OF LOW-FREQUENCY RANDOM TELEGRAPH SIGNAL AND 1/f NOISE LEVELS IN MOSFETS

MASATO TOITA

Process Technology Department, Asahi Kasei Microsystems, Nobeoka, Miyazaki 882-0031, Japan

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LODE K. J. VANDAMME

Department of Electrical Engineering, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands

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SHIGETOSHI SUGAWA

Management of Science & Technology Dept., Tohoku University, Sendai 980-8579, Japan

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AKINOBU TERAMOTO

New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan

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TADAHIRO OHMI

New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan

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https://doi.org/10.1142/S0219477505002999Cited by:18 (Source: Crossref)

Abstract

Low-frequency noise in MOSFETs is considered to originate from two distinctive sources: Random Telegraph Signal caused by carrier traps at the border of the SiO₂/Si interface and 1/f fluctuation due to inherent nature of lattice scattering in a Si crystal. It is very important to distinguish these two mechanisms. Relative amplitude of RTS and 1/f noise depends on the number of carriers under the gate electrode, which makes it channel size as well as gate-bias dependent. In this paper, we discuss the dependence of the amplitudes of RTS and 1/f noise in MOSFETs on sample geometry and gate bias condition. We discuss low-frequency noise reduction by utilizing low electron-temperature plasma for gate oxidation as well.

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