Narrow Results

Spectroscopic measurements are carried out to investigate the effect of plasma oxide surface coating of electrodes on impurity concentration and plasma parameters (electron temperature and density). Optical spectra (380–700) emitted from argon glow discharge plasma are recorded as a function of plasma oxidation time of electrodes. Emission intensity of the selected aluminum lines is measured as a function of electrodes oxidation time to study its effect on impurity concentration. Significant decrease in the impurity concentration is observed due to plasma oxide surface coating. The electron temperature is deduced from the ratio of Ar-I emission lines whereas the electron density is determined from the ratio of Ar-I and Ar-II emission lines. Both the electron temperature and density are found to increase with plasma oxidation of electrodes.

Low-frequency noise in MOSFETs is considered to originate from two distinctive sources: Random Telegraph Signal caused by carrier traps at the border of the SiO₂/Si interface and 1/f fluctuation due to inherent nature of lattice scattering in a Si crystal. It is very important to distinguish these two mechanisms. Relative amplitude of RTS and 1/f noise depends on the number of carriers under the gate electrode, which makes it channel size as well as gate-bias dependent. In this paper, we discuss the dependence of the amplitudes of RTS and 1/f noise in MOSFETs on sample geometry and gate bias condition. We discuss low-frequency noise reduction by utilizing low electron-temperature plasma for gate oxidation as well.