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INCREASING OF THE SHARPNESS OF p–n JUNCTIONS BY LASER PULSES

E. L. PANKRATOV

Nizhny Novgorod State University of Architecture and Civil Engineering, 65 Il'insky Street, Nizhny Novgorod, 603950, Russia

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https://doi.org/10.1142/S1793292011002329Cited by:4 (Source: Crossref)

Abstract

Dopant redistribution in a multilayer structure during annealing by laser pulses for production of implanted-junction rectifiers has been analyzed. The analysis shows that heating the surface region of the multilayer structure leads to increasing of previously described effect of simultaneously increasing of sharpness of implanted-junction rectifier and homogeneity of dopant distribution in doped area. It was found that the theoretical spatial distribution of dopant agrees with the experimental one. Annealing time has been optimized for laser pulse annealing.

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