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This paper reports on a semiconducting resistor material based on vanadium sesquioxide (V₂O₃) with electrical resistivity and temperature coefficient of resistance (TCR) appropriate for microbolometer applications. In this work, V₂O₃-based semiconducting resistor material was synthesized and electrically characterized. The developed material was prepared by annealing, in O₂ and N₂ atmospheres, a cascaded multilayer structure composed of V₂O₃ (10 nm) and V (5 nm) room temperature sputter coated thin films. The developed 55 nm thin film microbolometer resistor material possessed high temperature sensitivity from 20${}^{\circ }$C to 45${}^{\circ }$C with a TCR of −3.68%/${}^{\circ }$C and room temperature resistivity of 0.57 $\mathrm{\Omega }\cdot \mathrm{\text{cm}}$ for O₂ annealed samples and a TCR of −3.72%/${}^{\circ }$C and room temperature resistivity of 0.72 $\mathrm{\Omega }\cdot \mathrm{\text{cm}}$ for N₂ annealed samples. The surface morphologies of the synthesized thin films were studied using atomic force microscopy showing no significant post-growth annealing effect on the smoothness of the samples surfaces.

Dopant redistribution in a multilayer structure during annealing by laser pulses for production of implanted-junction rectifiers has been analyzed. The analysis shows that heating the surface region of the multilayer structure leads to increasing of previously described effect of simultaneously increasing of sharpness of implanted-junction rectifier and homogeneity of dopant distribution in doped area. It was found that the theoretical spatial distribution of dopant agrees with the experimental one. Annealing time has been optimized for laser pulse annealing.