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Open Access

Dielectric properties of amorphous Bi–Ti–O thin films

    https://doi.org/10.1142/S2010135X21500090Cited by:1 (Source: Crossref)
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    Abstract

    We report the unexpectedly excellent dielectric properties of amorphous thin films with compositions in the Bi–Ti–O system. Films were deposited by RF magnetron reactive co-sputtering. In the composition range of 0.5 < x < 0.7, amorphous Bi1−xTixOy exhibits excellent dielectric properties, with a high dielectric constant, 𝜀r∼ 53, and a dissipation factor as low as tan δ = 0.007. The corresponding maximum breakdown field reaches ∼1.6 MV/cm, yielding a maximum stored charge per unit area of up to 8 μC/cm2. This work demonstrates the potential of amorphous Bi–Ti–O as a high-performance thin-film dielectric material that is compatible with high-performance integrated circuits.

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