Photoluminescence Analysis of the Ternary Alloy GaAsSb Sulfur Passivation
This work is supported by the National Natural Science Foundation of China (61204065, 61205193, 61307045, 61404009, 61474010, 11404219 and 11404161), the Developing Project of Science and Technology of Jilin Province (20130101026JC), National Key Lab of High Power Semiconductor Lasers Foundation (No. 9140C310101120C031115, 9140C310104110C3101, 9140C310102130C31107, 9140C3101024C310004, 9140C310101120C031115).
The semiconductor material surface due to dangling bonds reasons, readily combine with oxygen in the air and easily be oxidized. These non-radiative recombination centers are formed in the surface states bring great impact on the electrical properties, optical properties of the photovoltaic device, particularly in the Micro-nano devices. In previous studies, sulfur passivation is a very effective method to remove surface states for semiconductor material, but rarely in the ternary alloy study. In this paper, we utilize the X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) to analyze the properties of sulfur passivation of GaAsSb/GaSb by ammonium sulfide solution, and found that the PL peak intensity of the passivation samples are both higher than the untreated sample's. There is also conclusion that passivation time of 360s has a smoother surface than the 60s sample.
