Narrow Results

Density functional theory is used to resolve the adatom-step and adatom–adatom interactions on vicinal Cu(111) surface. We demonstrated that the interactions between 3d adatoms appreciably depend on the distance from a surface step. Our calculations show that the magnitude of the repulsive barrier related to the surface step is larger for 3d adatoms located at the upper surface terrace than for adatoms located at the lower surface terrace.

The semiconductor material surface due to dangling bonds reasons, readily combine with oxygen in the air and easily be oxidized. These non-radiative recombination centers are formed in the surface states bring great impact on the electrical properties, optical properties of the photovoltaic device, particularly in the Micro-nano devices. In previous studies, sulfur passivation is a very effective method to remove surface states for semiconductor material, but rarely in the ternary alloy study. In this paper, we utilize the X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) to analyze the properties of sulfur passivation of GaAsSb/GaSb by ammonium sulfide solution, and found that the PL peak intensity of the passivation samples are both higher than the untreated sample's. There is also conclusion that passivation time of 360s has a smoother surface than the 60s sample.